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DMN60H080DS-7

Part No DMN60H080DS-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 80MA SOT23-3 / N-Channel 600 V 80mA (Ta) 1.1W (Ta) Surface Mount SOT-23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Diodes Incorporated
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 80mA
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 100Ohm @ 60mA, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 25 pF @ 25 V
Power Dissipation (Max) 1.1W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Supplier Device Package SOT-23-3
Case / Package TO-236-3, SC-59, SOT-23-3
Base Product Number DMN60
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMN60H080DS-7DIDKR,DMN60H080DS-7-ND,DMN60H080DS-7DICT,DMN60H080DS-7DITR
Standard Package 3,000
Win Source Part Number 1325323-DMN60H080DS-7
Ultra Librarian 3D Model Ultra Librarian DMN60H080DS-7 CAD Model

Description

Introducing the DMN60H080DS-7 Power MOSFET by Diodes Incorporated

The DMN60H080DS-7 is a state-of-the-art power MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This high-performance, surface-mount transistor is designed to deliver efficiency and reliability for a wide range of applications. Its compact form factor and robust design make it an ideal choice for designers looking to enhance power management in their electronic circuits.

Key Features

  • Low On-Resistance: The DMN60H080DS-7 boasts an ultra-low on-resistance (R<sub>DS(on)), which ensures minimal power loss and improves overall efficiency when the MOSFET is in the 'on' state.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D), this MOSFET can handle significant power, making it suitable for demanding applications.
  • High-Speed Switching: The device is capable of high-speed switching, which is essential for reducing switching losses and improving performance in power conversion systems.
  • PowerDI®5x6 Package: Encased in the innovative PowerDI®5x6 package, the DMN60H080DS-7 offers excellent thermal performance and a compact footprint, perfect for space-constrained applications.
  • Lead-Free and RoHS Compliant: Adhering to environmental regulations, this MOSFET is lead-free and RoHS compliant, making it suitable for use in green products.

Applications

The versatility of the DMN60H080DS-7 allows it to be used in a variety of applications, including:

  • DC-DC Converters
  • Power Supply Units (PSUs)
  • Motor Drives
  • Battery Management Systems
  • Load Switches
  • Point of Load (POL) Modules

Reliability and Performance

Diodes Incorporated has engineered the DMN60H080DS-7 with a focus on reliability and performance. It operates over a wide temperature range and is designed to withstand challenging environmental conditions, ensuring a long operational life in your products. Whether you're developing power systems for consumer electronics, industrial equipment, or automotive applications, the DMN60H080DS-7 is a powerful solution that can meet your needs.

Choose the DMN60H080DS-7 for your next project and experience the difference in power efficiency and reliability that Diodes Incorporated delivers.

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Pricing & Ordering

Quantity Unit Price Ext. Price
830+ $0.0606 $50.2980
1,765+ $0.0567 $100.0755
2,740+ $0.0548 $150.1520
3,930+ $0.0509 $200.0370
5,115+ $0.0489 $250.1235
6,385+ $0.0470 $300.0950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 38,785 pieces
MOQ: 830 pcs
Order Increment : 1 pcs
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