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DMN61D8LVT-7

Part No DMN61D8LVT-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET 2N-CH 60V 0.63A TSOT26 / Mosfet Array 60V 630mA 820mW Surface Mount TSOT-26
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Diodes Incorporated
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 630mA
Rds On (Max) @ Id, Vgs 1.8Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 0.74nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 12.9pF @ 12V
Power - Max 820mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package TSOT-26
Base Product Number DMN61
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 852754-DMN61D8LVT-7
Ultra Librarian 3D Model Ultra Librarian DMN61D8LVT-7 CAD Model

Description

Overview of Diodes Incorporated DMN61D8LVT-7

The DMN61D8LVT-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) offered by Diodes Incorporated, a leading manufacturer in the semiconductor market. This product is designed with precision to cater to a wide range of applications that require efficient power management and high-speed switching capabilities. It is an ideal component for power conversion and management solutions in portable electronics, computing devices, and power supply systems.

Key Features

  • Low Threshold Voltage: The DMN61D8LVT-7 features a low threshold voltage, which allows for the transistor to be easily turned on with low gate voltages, making it suitable for low-voltage applications.
  • High-Speed Switching: With its fast switching speed, this MOSFET is capable of operating at high frequencies, which is crucial for efficient power regulation and minimizing energy loss.
  • Low On-Resistance: The device exhibits low on-resistance (R<sub>DS(on)), which translates to reduced power dissipation and improved overall efficiency.
  • Surface-Mount Package: The DMN61D8LVT-7 comes in a small surface-mount package, specifically the SOT-523, which is suitable for compact circuit designs and helps in saving PCB space.
  • Lead-Free and RoHS Compliant: In line with environmental standards, this product is lead-free and RoHS compliant, minimizing the environmental impact and ensuring safety in electronic equipment.

Applications

The versatility of the DMN61D8LVT-7 allows it to be used in various applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Battery-Powered Devices
  • Load Switches
  • Portable Electronics
  • Computing Devices

Technical Specifications

The DMN61D8LVT-7 boasts a Drain-Source Voltage (V<sub>DS) of 60V, a Gate-Source Voltage (V<sub>GS) of ±20V, and a Continuous Drain Current (I<sub>D) of 460mA. Its thermal characteristics and robust design ensure reliable performance under varying conditions.

For engineers and designers looking for a reliable and efficient N-Channel MOSFET, the DMN61D8LVT-7 from Diodes Incorporated offers a compelling solution with its advanced features and compact form factor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
190+ $0.2672 $50.7680
460+ $0.2192 $100.8320
710+ $0.2124 $150.8040
975+ $0.2055 $200.3625
1,260+ $0.1987 $250.3620
1,685+ $0.1781 $300.0985
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 190 pcs
Order Increment : 1 pcs
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