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DMN62D0LFB-7

Part No DMN62D0LFB-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V X2-DFN1006-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 0.45nC @ 4.5V
Max Input Capacitance 32pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 470mW (Ta)
Maximum Rds On at Id,Vgs 2 Ohm @ 100mA, 4V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-X1DFN1006
Dimension 3-UFDFN
Win Source Part Number 1033796-DMN62D0LFB-7
Family Name DMN62D0LFB
Introduction Date July 29, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian DMN62D0LFB-7 CAD Model

Description

Product Overview: DMN62D0LFB-7 from Diodes Incorporated

The DMN62D0LFB-7 is a high-performance, N-channel enhancement mode field-effect transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to cater to a wide array of power management and switching applications, making it a versatile component for modern electronic designs.

Key Features

  • Low On-Resistance: The DMN62D0LFB-7 boasts an exceptionally low on-resistance, which translates to reduced power loss and improved efficiency in operation. This feature is particularly beneficial in applications where power efficiency is critical.
  • High-Speed Switching: Engineered for fast switching performance, this MOSFET is ideal for high-speed circuit designs, contributing to better overall performance of the electronic device.
  • Low Threshold Voltage: With a low gate threshold voltage, this component can be easily driven by logic-level voltages, making it compatible with a wide range of control circuits and reducing the need for level shifting.
  • Small Package Size: The DMN62D0LFB-7 comes in a compact SOT-23 package, which is highly beneficial for space-constrained applications without compromising on power and performance.

Applications

  • Power Management
  • Load Switch
  • DC-DC Converters
  • Battery Management Systems
  • Motor Control
  • Computing Devices

Diodes Incorporated has equipped the DMN62D0LFB-7 with robust thermal performance characteristics, ensuring reliability and longevity even under stressful conditions. This MOSFET is also RoHS compliant, adhering to environmental standards and regulations, which is increasingly important in today's eco-conscious market.

Whether you are designing a sophisticated power supply unit, an intricate motor control system, or a compact portable device, the DMN62D0LFB-7 from Diodes Incorporated offers the performance and reliability you need. Its technical sophistication, combined with its practical design considerations, makes it an excellent choice for both prototyping and mass production.

For detailed specifications and application support, visit the Diodes Incorporated website or contact their customer support team. The DMN62D0LFB-7 is not just a component; it's a building block for innovation in the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
795+ $0.0629 $50.0055
1,700+ $0.0589 $100.1300
2,640+ $0.0569 $150.2160
3,785+ $0.0529 $200.2265
4,915+ $0.0509 $250.1735
6,125+ $0.0490 $300.1250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 490,000 pieces
MOQ: 795 pcs
Order Increment : 1 pcs
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