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DMN62D0SFD-7

Part No DMN62D0SFD-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 60V 0.54A 3-Pin DFN T/R / MOSFET N-CH 60V 540MA 3-DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 0.87nC @ 10V
Max Input Capacitance 30.2pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 430mW (Ta)
Maximum Rds On at Id,Vgs 2 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package X1-DFN1212-3
Dimension 3-UDFN
Win Source Part Number 098996-DMN62D0SFD-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name DMN62D0SFD
Introduction Date September 16, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian DMN62D0SFD-7 CAD Model

Description

Product Overview: DMN62D0SFD-7 - Diodes Incorporated

The DMN62D0SFD-7 is a high-performance, N-channel enhancement mode field-effect transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This product is particularly suitable for a wide range of applications, including power management, load switching, and conversion in consumer electronics, computing devices, and portable equipment.

Key Features

  • Low On-Resistance: The DMN62D0SFD-7 offers a low on-resistance (RDS(on)), which enhances its efficiency by minimizing power losses during operation, thus making it an ideal choice for power-sensitive applications.
  • High-Speed Switching: Engineered for fast switching performance, this MOSFET can handle high-speed operations, which is critical in modern electronic circuits requiring quick response times.
  • Compact Footprint: Housed in a small form factor SOT-363 package, the DMN62D0SFD-7 is optimized for space-constrained applications, allowing for more compact circuit designs.
  • Low Threshold Voltage: The device features a low threshold voltage, facilitating its use in low-voltage applications and enabling it to be driven by logic-level voltages.
  • High Continuous Drain Current: With a high continuous drain current (ID), this MOSFET can handle significant current loads, making it suitable for high-power applications.
  • RoHS Compliant: The DMN62D0SFD-7 is compliant with RoHS standards, ensuring that it meets environmental regulations by avoiding the use of hazardous substances.

Applications

The versatility of the DMN62D0SFD-7 allows it to be used in a variety of electronic applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Battery Management Systems
  • Load Switches
  • Motor Control Modules
  • Portable Electronic Devices

With its blend of low on-resistance, high-speed switching, and compact packaging, the DMN62D0SFD-7 by Diodes Incorporated stands out as a robust and reliable component for designers looking to enhance the performance and efficiency of their electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0187 $50.9350
120+ $0.8359 $100.3080
190+ $0.8098 $153.8620
260+ $0.7836 $203.7360
335+ $0.7575 $253.7625
445+ $0.6792 $302.2440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 51,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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