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DMN63D8LW-7

Part No DMN63D8LW-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 0.38A SOT323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 0.9nC @ 10V
Max Input Capacitance 23.2pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300mW (Ta)
Maximum Rds On at Id,Vgs 2.8 Ohm @ 250mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323
Dimension SC-70, SOT-323
Win Source Part Number 1033801-DMN63D8LW-7
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian DMN63D8LW-7 CAD Model

Description

Introducing the DMN63D8LW-7 MOSFET from Diodes Incorporated

The DMN63D8LW-7 is a high-performance, N-channel enhancement mode field-effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This power MOSFET is a robust and efficient solution for a wide range of applications requiring fast switching, low on-resistance, and minimal power loss.

Key Features

  • Low On-Resistance: The DMN63D8LW-7 boasts an exceptionally low on-resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency in your circuits.
  • High-Speed Switching: Optimized for fast switching performance, this MOSFET can handle high-frequency operations with ease, making it ideal for power management and conversion applications.
  • Low Threshold Voltage: The device features a low threshold voltage, ensuring that it can be driven by low-voltage control signals, thus broadening its compatibility with various logic levels.
  • Surface-Mount Package: Encapsulated in a compact SOT-23 package, the DMN63D8LW-7 is designed for surface-mount technology (SMT), allowing for efficient assembly and space-saving on PCBs.
  • RoHS Compliant: Adhering to environmental standards, this MOSFET is RoHS compliant, minimizing the use of hazardous substances in electronic components.

Applications

The DMN63D8LW-7 is versatile and can be used in a variety of applications including:

  • Power Management
  • DC-DC Converters
  • Battery Powered Devices
  • Motor Control Circuits
  • Load/Power Switching
  • Portable Electronic Devices

Reliability and Performance

Diodes Incorporated has a reputation for producing reliable and high-quality components. The DMN63D8LW-7 is no exception, offering stable performance even under demanding conditions. Its robustness is further enhanced by its thermal characteristics, which allow it to operate effectively over a wide temperature range.

In conclusion, the DMN63D8LW-7 from Diodes Incorporated is a superior choice for designers looking to implement an efficient and reliable N-channel MOSFET into their electronic designs. Its low on-resistance, high-speed switching capabilities, and compact form factor make it a valuable component in any power management or switching application.

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Pricing & Ordering

Quantity Unit Price Ext. Price
575+ $0.0874 $50.2550
1,395+ $0.0717 $100.0215
2,160+ $0.0695 $150.1200
2,980+ $0.0672 $200.2560
3,850+ $0.0650 $250.2500
5,150+ $0.0583 $300.2450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 257,405 pieces
MOQ: 575 pcs
Order Increment : 1 pcs
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