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DMN66D0LDW-7-F

Part No DMN66D0LDW-7-F
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Arrays
Manufacturer Diodes Incorporated
Win Source Part Number 252634-DMN66D0LDW-7-F
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN66D0LDW-7-F CAD Model

Description

The DMN66D0LDW-7-F from Diodes Incorporated is a high-performance, dual N-channel enhancement mode field effect transistor (FET) that comes in an ultra-compact and space-saving package. Designed to meet the requirements of modern electronic devices, this MOSFET is a perfect choice for power management applications where efficiency and size are critical.

Key Features:

  • Low On-Resistance: The device offers a low on-resistance, which translates into minimal power loss and improved overall efficiency in circuit operation.
  • High-Speed Switching: With its fast switching capabilities, the DMN66D0LDW-7-F ensures reduced switching losses, making it suitable for high-frequency applications.
  • Dual N-Channel Configuration: The dual N-channel setup allows for flexibility in design, providing the option to control two separate circuits or to use in a complementary push-pull arrangement for enhanced performance.
  • Lead-Free and RoHS Compliant: Adhering to environmental standards, the product is manufactured without the use of lead and is RoHS compliant, making it an eco-friendly choice for electronic designs.
  • Small Form Factor: Housed in a small SOT-363 package, the DMN66D0LDW-7-F is ideal for applications where PCB real estate is at a premium.

Applications:

The DMN66D0LDW-7-F is versatile and can be used in a variety of applications, including but not limited to:

  • Power Management Circuits
  • DC-DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Control
  • Portable Electronic Devices

Technical Specifications:

Some of the key technical specifications of the DMN66D0LDW-7-F include a continuous drain current (ID) rating, a low threshold voltage (VGS(th)), and a wide operating temperature range. These features make the device a reliable and robust option for a broad spectrum of electronic circuits.

Conclusion:

The DMN66D0LDW-7-F from Diodes Incorporated stands out as a high-efficiency, space-saving dual N-channel MOSFET that is both eco-friendly and versatile for a wide range of applications. Its compact form factor, combined with its high-speed switching and low on-resistance, makes it a top choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.1887 $50.0055
570+ $0.1768 $100.7760
880+ $0.1708 $150.3040
1,260+ $0.1589 $200.2140
1,640+ $0.1529 $250.7560
2,045+ $0.1469 $300.4105
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 220,500 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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