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DMP1012UCB9-7

Part No DMP1012UCB9-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 10A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.1V @ 250μA
Max Gate Charge 10.5nC @ 4.5V
Max Input Capacitance 1060pF @ 4V
Maximum Gate-Source Voltage -6V
Power Dissipation (Max) 890mW (Ta)
Maximum Rds On at Id,Vgs 10 mOhm @ 2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package U-WLB1515-9
Dimension 9-UFBGA, WLBGA
Win Source Part Number 1033804-DMP1012UCB9-7
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian DMP1012UCB9-7 CAD Model

Description

Overview of DMP1012UCB9-7 P-Channel MOSFET

The DMP1012UCB9-7 is a high-performance P-Channel enhancement mode MOSFET from Diodes Incorporated, designed to deliver efficient power management and control in a wide range of electronic applications. Its compact and robust design, along with its impressive electrical characteristics, make it an ideal choice for engineers looking to optimize their power circuitry.

Key Features

  • Low On-Resistance: The device features a low on-resistance (R<sub>DS(on)) which minimizes conduction losses and enhances overall efficiency, making it suitable for high-performance power switching applications.
  • High Power Dissipation: With a power dissipation of 1.4W, the DMP1012UCB9-7 can handle significant power levels, which is beneficial for handling larger currents without overheating.
  • Advanced Packaging: Encased in a compact DFN2020B-3 (Type B) package, the MOSFET offers a small footprint on the PCB, which is crucial for space-constrained applications.
  • High Threshold Voltage: It possesses a threshold voltage (V<sub>GS(th)) that ensures reliable operation even under fluctuating voltage conditions, providing stable performance.

Electrical Specifications

  • Drain-Source Voltage (V<sub>DSS): -20V
  • Continuous Drain Current (I<sub>D): -5.7A
  • Gate-Source Voltage (V<sub>GS): ±8V
  • Maximum R<sub>DS(on): 24mΩ at V<sub>GS = -4.5V
  • Static Drain-Source On-Resistance: 30mΩ at V<sub>GS = -2.5V

Applications

The versatility of the DMP1012UCB9-7 makes it suitable for a variety of applications, including:

  • Load/Power Switching
  • Battery Management Systems
  • DC-DC Converters
  • Power Management for Portable Devices
  • Motor Control Circuits

Quality and Reliability

Diodes Incorporated is known for its commitment to quality, and the DMP1012UCB9-7 is no exception. It is designed to meet the stringent requirements of industrial and consumer electronic devices. The MOSFET's reliability is further assured by its compliance with RoHS and Green Device standards, ensuring both environmental friendliness and sustainability.

With its combination of efficiency, power handling, and compact packaging, the DMP1012UCB9-7 from Diodes Incorporated stands out as a top-tier component for designers seeking to enhance their power management solutions.

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