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DMP2160UFDB-7

Part No DMP2160UFDB-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 3.8A 6UDFN / Trans MOSFET P-CH 20V 3.8A 6-Pin DFN T/R
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.8A
Maximum Rds On at Id,Vgs 70 mOhm @ 2.8A, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 6.5nC @ 4.5V
Max Input Capacitance 536pF @ 10V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package U-DFN2020-6 (Type B)
Win Source Part Number 080592-DMP2160UFDB-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name DMP2160UFDB
Introduction Date November 25, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian DMP2160UFDB-7 CAD Model

Description

The DMP2160UFDB-7 is a P-Channel Enhancement Mode MOSFET produced by Diodes Incorporated, designed to offer efficient power management within electronic circuits. This semiconductor device is a critical component for a wide range of applications, including load switch, power management, and battery protection circuits. Its compact form factor and low on-resistance make it an ideal choice for portable and space-constrained applications.

Key Features

  • Low On-Resistance: The DMP2160UFDB-7 boasts an exceptionally low on-resistance, which translates to reduced power loss and improved efficiency in operation.
  • High Power Dissipation: With a power dissipation of 1.4W, this MOSFET can handle significant power levels, making it suitable for demanding applications.
  • Small Package: Housed in a compact DFN2020-6 (Type B) package, it requires minimal PCB space, which is crucial for modern high-density electronic designs.
  • Low Threshold Voltage: The device features a low threshold voltage, ensuring it can be easily driven by low-voltage control signals.
  • RoHS Compliant: The DMP2160UFDB-7 meets RoHS standards, ensuring compliance with environmental regulations and a reduction in harmful substances.

Specifications

Parameter Value
Drain-Source Voltage (VDS) -20V
Continuous Drain Current (ID) -3.7A
Gate-Source Voltage (VGS) ±8V
RDS(on) 65mΩ @ VGS = -4.5V
Power Dissipation (PD) 1.4W

The DMP2160UFDB-7 is a testament to Diodes Incorporated's commitment to providing high-quality, reliable components for the electronics industry. Whether for power regulation in consumer electronics or as part of an intricate circuit in industrial systems, this P-Channel MOSFET stands out for its performance and miniaturization.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4803 $50.4315
255+ $0.3941 $100.4955
395+ $0.3818 $150.8110
545+ $0.3695 $201.3775
705+ $0.3571 $251.7555
940+ $0.3202 $300.9880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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