The DMP2160UFDB-7 is a P-Channel Enhancement Mode MOSFET produced by Diodes Incorporated, designed to offer efficient power management within electronic circuits. This semiconductor device is a critical component for a wide range of applications, including load switch, power management, and battery protection circuits. Its compact form factor and low on-resistance make it an ideal choice for portable and space-constrained applications.
Key Features
- Low On-Resistance: The DMP2160UFDB-7 boasts an exceptionally low on-resistance, which translates to reduced power loss and improved efficiency in operation.
- High Power Dissipation: With a power dissipation of 1.4W, this MOSFET can handle significant power levels, making it suitable for demanding applications.
- Small Package: Housed in a compact DFN2020-6 (Type B) package, it requires minimal PCB space, which is crucial for modern high-density electronic designs.
- Low Threshold Voltage: The device features a low threshold voltage, ensuring it can be easily driven by low-voltage control signals.
- RoHS Compliant: The DMP2160UFDB-7 meets RoHS standards, ensuring compliance with environmental regulations and a reduction in harmful substances.
Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDS) |
-20V |
| Continuous Drain Current (ID) |
-3.7A |
| Gate-Source Voltage (VGS) |
±8V |
| RDS(on) |
65mΩ @ VGS = -4.5V |
| Power Dissipation (PD) |
1.4W |
The DMP2160UFDB-7 is a testament to Diodes Incorporated's commitment to providing high-quality, reliable components for the electronics industry. Whether for power regulation in consumer electronics or as part of an intricate circuit in industrial systems, this P-Channel MOSFET stands out for its performance and miniaturization.