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DMP21D6UFB4-7B

Part No DMP21D6UFB4-7B
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 580MA 3DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 580mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 1Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.8 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 46.1 pF @ 10 V
FET Feature -
Power Dissipation (Max) 510mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package X2-DFN1006-3
Package / Case 3-XFDFN
Base Product Number DMP21
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1376773-DMP21D6UFB4-7B
Ultra Librarian 3D Model Ultra Librarian DMP21D6UFB4-7B CAD Model

Description

Introducing the DMP21D6UFB4-7B from Diodes Incorporated

The DMP21D6UFB4-7B is a cutting-edge P-Channel MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This high-performance transistor is designed to meet the rigorous demands of power management applications across a wide range of electronic devices.

With its ultra-small form factor, the DMP21D6UFB4-7B is housed in a compact DFN2020-6 (B) package, making it an ideal choice for space-constrained applications. Its footprint not only saves valuable board space but also contributes to reduced end-product size, which is critical in today's miniaturized electronic assemblies.

The DMP21D6UFB4-7B boasts a drain-source voltage (V<sub>DS) of -20V and a continuous drain current (I<sub>D) of -6.4A at a temperature of 25°C, providing ample current handling capability for a variety of applications. Additionally, the device features a low threshold voltage (V<sub>GS(th)), which ensures efficient operation at lower gate voltages, thus improving power efficiency and reducing energy consumption.

One of the key attributes of this MOSFET is its low on-resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall device efficiency. This characteristic is particularly beneficial in applications where low voltage operation and high efficiency are paramount, such as portable electronics, battery management systems, and power supply circuits.

The DMP21D6UFB4-7B is also characterized by its fast switching performance, which is essential for high-frequency power conversion applications. Fast switching not only improves efficiency but also reduces switching losses, enabling more compact and cooler running power supplies.

For protection and reliability, the DMP21D6UFB4-7B includes robust features such as over-temperature, over-current, and electrostatic discharge (ESD) protection. These features ensure the longevity and stable operation of the device under various environmental conditions and stress events.

In summary, the DMP21D6UFB4-7B from Diodes Incorporated is a high-performance, energy-efficient P-Channel MOSFET that is a perfect fit for designers seeking to optimize power management in their next-generation electronic products. With its compact size, robust protection features, and exceptional electrical characteristics, this MOSFET is set to be a key component in driving innovation across various industries.

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Pricing & Ordering

Quantity Unit Price Ext. Price
630+ $0.0797 $50.2110
1,530+ $0.0654 $100.0620
2,370+ $0.0634 $150.2580
3,265+ $0.0613 $200.1445
4,220+ $0.0593 $250.2460
5,640+ $0.0532 $300.0480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 68,683 pieces
MOQ: 630 pcs
Order Increment : 1 pcs
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