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DMP3008SFGQ-7

Part No DMP3008SFGQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description 30V P-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Channel Type Type P
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 47nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2230pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 900mW (Ta)
Rds On (Maximum) @ Id, Vgs 17 mOhm @ 10A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerDI3333-8
Package 8-PowerWDFN
Win Source Part Number 1168262-DMP3008SFGQ-7
Manufacturer Homepage www.diodes.com
Popularity Medium
Supply and Demand Status Limited
Family Name DMP3008SFGQ
Introduction Date October 06, 2015
Halogen Free Compliant
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian DMP3008SFGQ-7 CAD Model

Description

Introducing the DMP3008SFGQ-7 P-Channel MOSFET from Diodes Incorporated

The DMP3008SFGQ-7 is a high-performance P-Channel enhancement mode MOSFET brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to deliver efficient power management and control in a variety of applications. It is housed in a compact DFN2020-6 (Type B) package that offers excellent power dissipation and minimal footprint on the PCB.

With its P-Channel configuration, the DMP3008SFGQ-7 is ideal for load switch and power management applications that require a low on-resistance and high switching speed. This MOSFET features a -30V drain-source breakdown voltage (V<sub>DS) and a -8A continuous drain current (I<sub>D), making it capable of handling significant power levels. The low threshold voltage ensures that the device can be driven at lower gate voltages, which is beneficial for battery-operated devices where power efficiency is crucial.

The device boasts a low on-resistance of 17mΩ at V<sub>GS = -10V, which translates to lower conduction losses and improved overall efficiency. This feature, combined with its fast switching capabilities, makes the DMP3008SFGQ-7 an excellent choice for high-efficiency power management in portable electronics, computing devices, and industrial applications.

Additionally, the DMP3008SFGQ-7 is RoHS compliant and Halogen-free, reflecting Diodes Incorporated's commitment to environmental sustainability. The MOSFET also features built-in ESD protection, which enhances the reliability and longevity of the device by safeguarding it against electrostatic discharge events during handling and operation.

In summary, the DMP3008SFGQ-7 from Diodes Incorporated is a versatile and robust P-Channel MOSFET that offers designers a perfect balance between power handling, efficiency, and compactness. Whether it's for power regulation in consumer electronics or for driving loads in industrial systems, this MOSFET is engineered to meet the demands of modern electronic circuits.

For detailed specifications, application notes, and additional resources, designers and engineers are encouraged to visit the official Diodes Incorporated website or contact their local sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4018 $50.2250
305+ $0.3297 $100.5585
470+ $0.3194 $150.1180
650+ $0.3091 $200.9150
840+ $0.2988 $250.9920
1,120+ $0.2679 $300.0480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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