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DMP3037LSS-13

Part No DMP3037LSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 5.8A 8-SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 19.3nC @ 10V
Max Input Capacitance 931pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.2W (Ta)
Maximum Rds On at Id,Vgs 32 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1033846-DMP3037LSS-13
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Consumer Electronics
Ultra Librarian 3D Model Ultra Librarian DMP3037LSS-13 CAD Model

Description

The DMP3037LSS-13 is a high-performance P-Channel enhancement mode MOSFET from Diodes Incorporated, designed for power management applications. It is a versatile component that offers a combination of low on-resistance and low gate charge, making it an efficient choice for a wide range of applications including load switch, power management, and other switching applications.

Key Features:

  • Low On-Resistance: With an R<sub>DS(on) as low as 30mΩ at V<sub>GS = -10V, the DMP3037LSS-13 ensures minimal power loss and heat generation, improving the overall efficiency of the system.
  • High Power Dissipation: This MOSFET can handle a significant amount of power, with a maximum power dissipation of 2.5W, enabling it to manage high current applications with ease.
  • Advanced Packaging: Encased in a RoHS-compliant PowerDI®3333-8 package, the DMP3037LSS-13 offers a small footprint without sacrificing thermal performance, making it suitable for compact designs.
  • High Threshold Voltage: A threshold voltage (V<sub>th) of -0.45V to -1.0V ensures that the MOSFET remains off under small fluctuations of voltage, providing a stable operation.
  • Wide Operating Temperature Range: The device can operate effectively over a broad temperature range from -55°C to 150°C, accommodating various environmental conditions.

Applications:

  • Power Management Circuits
  • Load Switches
  • Battery Management Systems
  • DC/DC Converters
  • Motor Drives

The DMP3037LSS-13 P-Channel MOSFET from Diodes Incorporated is a reliable and efficient solution for designers looking to optimize their power management systems. Its low on-resistance, high power handling, and advanced packaging make it a valuable component in any electronic design that requires a high-performance P-Channel MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.2739 $50.6715
445+ $0.2248 $100.0360
690+ $0.2178 $150.2820
950+ $0.2107 $200.1650
1,230+ $0.2037 $250.5510
1,645+ $0.1826 $300.3770
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,458 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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