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DMP6110SVTQ-13

Part No DMP6110SVTQ-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 7.3A TSOT26 / P-Channel 60 V 7.3A (Ta) 1.8W (Ta) Surface Mount TSOT-23-6
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 969 pF @ 30 V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TSOT-23-6
Package / Case SOT-23-6 Thin, TSOT-23-6
Base Product Number DMP6110
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1354771-DMP6110SVTQ-13
Ultra Librarian 3D Model Ultra Librarian DMP6110SVTQ-13 CAD Model

Description

Introducing the DMP6110SVTQ-13 P-Channel MOSFET from Diodes Incorporated

The DMP6110SVTQ-13 is a cutting-edge P-Channel enhancement mode MOSFET brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to deliver efficient power management and control in a wide range of applications, making it an ideal choice for designers looking for a reliable and high-performance component.

With its compact and robust design, the DMP6110SVTQ-13 is housed in a space-saving PowerDI3333-8 package, which not only minimizes the footprint on the PCB but also provides excellent thermal performance. The device features a -60V drain-source breakdown voltage (VDS), which ensures that it can handle significant voltage levels, making it suitable for various high-side switching applications.

The DMP6110SVTQ-13 boasts a low on-resistance (RDS(on)) of 8.8mΩ at VGS = -10V, which translates to reduced conduction losses and improved overall efficiency. This characteristic, combined with a continuous drain current (ID) of -5.2A, allows the MOSFET to manage considerable current flows efficiently, further enhancing its suitability for power-intensive operations.

One of the key advantages of the DMP6110SVTQ-13 is its fast switching speed, which is essential for high-frequency applications. The device's low gate charge (Qg) and low input capacitance (Ciss) contribute to its swift response times, enabling quick transitions and minimizing energy loss during switching events.

The MOSFET also features built-in protection against electrostatic discharge (ESD), safeguarding the device during handling and operation. This ESD protection ensures a more reliable and durable component, especially important in sensitive electronic environments.

In summary, the DMP6110SVTQ-13 from Diodes Incorporated is a high-performance P-Channel MOSFET that offers a combination of low on-resistance, high-speed switching, and robust protection features. Its compact size and thermal efficiency make it an excellent choice for power management solutions in applications ranging from consumer electronics to industrial automation. With this MOSFET, designers can expect a reliable and efficient component that meets the challenging demands of modern electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.1901 $50.3765
565+ $0.1781 $100.6265
875+ $0.1721 $150.5875
1,250+ $0.1600 $200.0000
1,625+ $0.1540 $250.2500
2,030+ $0.1480 $300.4400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 166,050 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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