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DMS2120LFWB-7

Part No DMS2120LFWB-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.9A 8DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.3V @ 250μA
Max Input Capacitance 632pF @ 10V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 95 mOhm @ 2.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-DFN3020B (3x2)
Dimension 8-VDFN Exposed Pad
Win Source Part Number 014505-DMS2120LFWB-7
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMS2120LFWB-7 CAD Model

Description

The DMS2120LFWB-7 from Diodes Incorporated is a state-of-the-art P-Channel MOSFET designed for high-efficiency power management applications. This MOSFET is an essential component for modern electronic devices, offering energy-saving features and a compact form factor that is ideal for space-constrained applications.

Key Features

  • Low On-Resistance: The device provides extremely low on-resistance (RDS(on)), which translates to reduced power loss and improved efficiency during operation.
  • High Power Dissipation: With a high power dissipation capability, this MOSFET can handle significant levels of power, making it suitable for demanding applications.
  • Small Footprint: The DMS2120LFWB-7 comes in a compact SOT-323 package, ensuring a minimal footprint on PCBs and enabling its use in space-sensitive designs.

Applications

This versatile P-Channel MOSFET is ideal for a wide range of applications, including:

  • Power management circuits
  • Load switching
  • Battery management systems
  • DC/DC converters
  • Portable electronic devices

Technical Specifications

Parameter Value
Drain-Source Voltage (VDS) -20V
Gate-Source Voltage (VGS) ±8V
Continuous Drain Current (ID) -3.7A
Power Dissipation (PD) 1W
Operating Temperature Range -55°C to +150°C

With its robust performance and reliability, the Diodes Incorporated DMS2120LFWB-7 P-Channel MOSFET is a superb choice for designers looking to enhance power efficiency in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1422 $50.4810
860+ $0.1167 $100.3620
1,330+ $0.1131 $150.4230
1,830+ $0.1094 $200.2020
2,365+ $0.1058 $250.2170
3,165+ $0.0948 $300.0420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 158,900 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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