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DMT10H009LSS-13

Part No DMT10H009LSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 13A/48A 8SO T&R
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 49 Weeks
Features N-Channel 100 V 13A (Ta), 48A (Tc) 1.8W (Ta) Surface Mount 8-SO
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-SOIC (0.154", 3.90mm Width)
Case / Package 8-SO
Family Name DMT10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 2500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869108-DMT10H009LSS-13
Ultra Librarian 3D Model Ultra Librarian DMT10H009LSS-13 CAD Model

Description

Introducing the DMT10H009LSS-13 from Diodes Incorporated

The DMT10H009LSS-13 is a state-of-the-art MOSFET transistor designed and manufactured by the renowned semiconductor company, Diodes Incorporated. This high-performance product is tailored to meet the rigorous demands of modern electronic applications, providing efficient power management and signal processing capabilities.

Key Features

  • Low On-Resistance: The device boasts an impressively low on-resistance, which translates to reduced power loss and enhanced efficiency in operation.
  • High-Speed Switching: Engineered for applications requiring rapid switching, the DMT10H009LSS-13 offers high-speed performance, making it ideal for power converters and management circuits.
  • Power Dissipation: With a power dissipation of 1.25W, this MOSFET can handle significant amounts of power, ensuring reliable performance in a variety of situations.
  • Surface-Mount Package: The product is available in a compact surface-mount package, specifically the PowerDI® 3333-8 type, which allows for efficient space utilization on printed circuit boards (PCBs).

Applications

The versatility of the DMT10H009LSS-13 makes it suitable for a broad range of applications, including:

  • DC-DC converters
  • Power management modules
  • Battery powered devices
  • Load switches
  • Motor control circuits

Technical Specifications

The DMT10H009LSS-13 is characterized by its impressive technical specifications that ensure optimal performance:

  • Drain-Source Voltage (Vds): 100V
  • Continuous Drain Current (Id): 3.7A
  • Gate-Source Voltage (Vgs): ±20V
  • Static Drain-Source On-Resistance (Rds on): 135 mΩ at Vgs=10V
  • Operating Temperature Range: -55°C to +150°C

Quality and Reliability

Diodes Incorporated is committed to delivering products of the highest quality. The DMT10H009LSS-13 is no exception, having been rigorously tested to ensure reliability and performance under various conditions. Users can trust this MOSFET to deliver consistent results over its lifespan.

Ordering Information

The product is available in tape and reel packaging, facilitating easy integration into automated manufacturing processes. For ordering, the full part number DMT10H009LSS-13 should be used to reference this specific model.

With its robust design, efficient operation, and Diodes Incorporated's guarantee of quality, the DMT10H009LSS-13 is an excellent choice for designers and engineers looking to enhance their electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7504 $60.0320
190+ $0.6158 $117.0020
295+ $0.5966 $175.9970
405+ $0.5773 $233.8065
520+ $0.5581 $290.2120
695+ $0.5003 $347.7085
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,560 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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