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DMT10H072LFV-13

Part No DMT10H072LFV-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V PWRDI3333
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 100 V 4.7A (Ta), 20A (Tc) 2W (Ta) Surface Mount PowerDI3333-8 (Type UX)
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerVDFN
Case / Package PowerDI3333-8 (Type UX)
Family Name DMT10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869122-DMT10H072LFV-13
Ultra Librarian 3D Model Ultra Librarian DMT10H072LFV-13 CAD Model

Description

Introducing the DMT10H072LFV-13 MOSFET from Diodes Incorporated

The DMT10H072LFV-13 is a cutting-edge power MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This high-performance component is designed to deliver efficiency and reliability for a wide range of applications, making it an ideal choice for designers looking to optimize their power management systems.

Key Features

  • Low On-Resistance: The DMT10H072LFV-13 boasts a low on-resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency. This feature is crucial for applications that demand high efficiency to reduce power consumption and heat generation.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET enables high-frequency operation, which is essential for switching power supplies and other power conversion applications.
  • PowerDI®3333-8 Package: Encased in Diodes Incorporated's proprietary PowerDI®3333-8 package, the DMT10H072LFV-13 offers a compact footprint while providing excellent thermal performance. This makes it suitable for space-constrained designs without compromising on power handling.
  • Integrated ESD Protection: The device includes built-in ESD protection, safeguarding it against electrostatic discharge events and enhancing its robustness in sensitive applications.

Applications

The versatility of the DMT10H072LFV-13 allows it to be used in a diverse array of applications, including:

  • DC-DC Converters
  • Power Supply Modules
  • Battery Management Systems
  • Motor Drives
  • Load Switches
  • Point of Load (POL) Regulation

Specifications

The DMT10H072LFV-13 operates with a drain-source voltage (V<sub>DS) of 100V, which is suitable for many mid-range power applications. The continuous drain current (I<sub>D) is rated at 3.1A, ensuring it can handle significant power levels. Additionally, the MOSFET has a maximum power dissipation (P<sub>D) of 2.5W, which, combined with its thermal characteristics, allows for stable operation over a wide temperature range.

With its robust design and high-performance features, the DMT10H072LFV-13 from Diodes Incorporated is an excellent choice for engineers and designers looking to enhance the efficiency and reliability of their power management systems.

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