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DMT3011LDT-7

Part No DMT3011LDT-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8A V-DFN3030-8  /  Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 8A, 10.7A 1.9W Surface Mount V-DFN3030-8 (Type K)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Diodes Incorporated
Package Tape & Reel
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A, 10.7A
Rds On (Max) @ Id, Vgs 20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 641pF @ 15V
Power - Max 1.9W
Temperature Range - Operating -55°C ~ 155°C (TJ)
Mounting SMD (SMT)
Package / Case 8-VDFN Exposed Pad
Supplier Device Package V-DFN3030-8 (Type K)
Base Product Number DMT3011
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names DMT3011LDT-7-ND,DMT3011LDT-7DICT,DMT3011LDT-7DITR,DMT3011LDT-7DIDKR
Standard Package 3,000
Win Source Part Number 1055820-DMT3011LDT-7
Ultra Librarian 3D Model Ultra Librarian DMT3011LDT-7 CAD Model

Description

DMT3011LDT-7 MOSFET by Diodes Incorporated

The DMT3011LDT-7 is a high-performance, P-Channel enhancement mode field-effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This component is a testament to Diodes' commitment to providing energy-efficient and compact solutions for a wide range of electronic applications. The DMT3011LDT-7 is particularly well-suited for power management tasks in portable and battery-powered devices, as well as load-switching and power conversion applications.

Encased in a small form-factor SOT-523 package, the DMT3011LDT-7 offers a space-saving solution without compromising on power and performance. This MOSFET features a drain-source voltage (V<sub>DS) of -30V and a continuous drain current (I<sub>D) of -6.3A, ensuring robust operation even under demanding conditions. Its low threshold voltage enables operation at lower gate voltages, which is ideal for low-voltage drive sources.

The DMT3011LDT-7 boasts a low on-resistance (R<sub>DS(on)) of just 45mΩ at a V<sub>GS of -4.5V, which translates to reduced power losses and improved efficiency in circuit operation. This feature is particularly important for battery-operated devices where energy conservation is paramount. Additionally, the device's fast switching speed enhances performance in high-frequency applications.

With its built-in electrostatic discharge (ESD) protection, the DMT3011LDT-7 ensures reliability and longevity, safeguarding against unexpected voltage spikes that can damage electronic components. This level of protection is essential for maintaining the integrity of sensitive electronic systems.

Diodes Incorporated has designed the DMT3011LDT-7 with a focus on green energy standards. The device is RoHS compliant, meaning it adheres to the restrictions on the use of certain hazardous substances in electrical and electronic equipment. This compliance reflects Diodes' dedication to environmental responsibility and the production of eco-friendly products.

Whether for power management in portable devices, load switching, or efficient power conversion, the DMT3011LDT-7 from Diodes Incorporated is an excellent choice for designers seeking a reliable, high-performance P-Channel MOSFET that meets the demands of modern electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5388 $59.2680
265+ $0.4421 $117.1565
405+ $0.4284 $173.5020
560+ $0.4146 $232.1760
725+ $0.4007 $290.5075
965+ $0.3592 $346.6280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,370 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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