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DMT32M5LFG-13

Part No DMT32M5LFG-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A POWERDI3333 / N-Channel 30 V 30A (Ta) 2.3W (Ta) Surface Mount PowerDI3333-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Diodes Incorporated
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4066 pF @ 15 V
Power Dissipation (Max) 2.3W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Supplier Device Package PowerDI3333-8
Case / Package 8-PowerVDFN
Base Product Number DMT32
RoHS Status ROHS3 Compliant
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Win Source Part Number 1324344-DMT32M5LFG-13
Ultra Librarian 3D Model Ultra Librarian DMT32M5LFG-13 CAD Model

Description

DMT32M5LFG-13 MOSFET by Diodes Incorporated

The DMT32M5LFG-13 is a high-performance, P-Channel enhancement mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated. This MOSFET is a part of Diodes Incorporated's extensive range of discrete, analog, and mixed-signal semiconductors that are known for their reliability and efficiency in various applications.

Constructed with advanced trench MOSFET technology, the DMT32M5LFG-13 offers low on-resistance and a fast switching performance, making it an ideal choice for power management tasks. Its P-Channel configuration allows for simplified circuitry when used in applications that require a high-side switch, as it can be driven by a positive supply voltage.

The device is housed in a compact PowerDI3333-8 package, which is designed to optimize the thermal performance and minimize the footprint on the PCB. This makes the DMT32M5LFG-13 particularly suitable for space-constrained applications such as portable and battery-powered devices, as well as for load switching and power management in consumer electronics, telecommunications, and industrial systems.

Key features of the DMT32M5LFG-13 include:

  • Low threshold voltage, which facilitates ease of drive and enhances the efficiency of the system.
  • High continuous drain current capability, ensuring it can handle high power requirements.
  • Low input capacitance and gate charge, which contribute to fast switching speeds and reduced power losses.
  • Robust thermal characteristics that enable reliable operation even under high-temperature conditions.
  • Halogen-free and RoHS compliant, reflecting Diodes Incorporated's commitment to environmental sustainability.

Whether you are designing power supplies, DC-DC converters, or looking to implement power-saving features in your circuitry, the DMT32M5LFG-13 offers a versatile solution that combines performance with power efficiency. Its robust design and advanced technology ensure that it meets the stringent requirements of modern electronic systems, providing designers with a flexible and dependable MOSFET option.

For detailed specifications and application notes, engineers and designers are encouraged to consult the datasheet and technical resources provided by Diodes Incorporated for the DMT32M5LFG-13 MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4093 $51.1625
300+ $0.3359 $100.7700
465+ $0.3254 $151.3110
640+ $0.3149 $201.5360
825+ $0.3044 $251.1300
1,100+ $0.2729 $300.1900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,909 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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