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DMT4011LFG-7

Part No DMT4011LFG-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 30A POWERDI3333
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.1 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 767 pF @ 20 V
Power Dissipation (Max) 15.6W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8
Package / Case 8-PowerVDFN
Base Product Number DMT4011
Standard Package 2,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 850052-DMT4011LFG-7
Ultra Librarian 3D Model Ultra Librarian DMT4011LFG-7 CAD Model

Description

Introducing the DMT4011LFG-7 MOSFET from Diodes Incorporated

Diodes Incorporated presents the DMT4011LFG-7, a cutting-edge MOSFET designed to deliver efficient power management and control in a variety of applications. This product is a testament to Diodes Incorporated's commitment to providing innovative solutions that meet the evolving needs of the electronics industry.

Key Features

  • Device Type: P-Channel MOSFET
  • Configuration: Single
  • Drain-Source Breakdown Voltage: -40V
  • Continuous Drain Current: -8.5A
  • R<sub>DS(on) - Drain-Source On-Resistance: 20 mOhm
  • Power Dissipation: 2.5W
  • Package / Case: PowerDI™ 123
  • Operating Temperature Range: -55°C to +150°C
  • RoHS compliant: Yes

The DMT4011LFG-7 is a P-Channel enhancement mode field effect transistor (FET) that utilizes the latest in trench MOSFET technology. This technology allows for low on-resistance and minimal gate charge, resulting in a highly efficient device with fast switching capabilities. It is designed to handle continuous drain currents of up to -8.5A, making it suitable for high-performance applications.

With a drain-source breakdown voltage of -40V, the DMT4011LFG-7 can reliably manage significant power levels. Its low on-resistance of 20 mOhm ensures minimal voltage drop and power loss, which is critical for maintaining efficiency in power conversion systems. The device's power dissipation of 2.5W allows for effective thermal management, ensuring stable operation under varying conditions.

The MOSFET comes in a compact PowerDI™ 123 package, which is ideal for space-constrained applications. Its small footprint does not compromise on power handling, making it an excellent choice for portable electronics, power management circuits, and other applications where efficiency is paramount.

With an operating temperature range of -55°C to +150°C, the DMT4011LFG-7 is built to withstand harsh environments and maintain performance reliability. Its compliance with RoHS standards reflects Diodes Incorporated's dedication to environmental responsibility and the production of eco-friendly components.

Whether you're designing power supplies, motor controllers, or looking to improve the efficiency of your electronic designs, the DMT4011LFG-7 MOSFET from Diodes Incorporated offers a robust and reliable solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3338 $50.0700
320+ $0.3127 $100.0640
500+ $0.3021 $151.0500
715+ $0.2810 $200.9150
925+ $0.2704 $250.1200
1,155+ $0.2599 $300.1845
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 145,387 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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