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DMT6009LFG-13

Part No DMT6009LFG-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 11A PWRDI3333
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 60 V 11A (Ta), 34A (Tc) 2.08W (Ta), 19.2W (Tc) Surface Mount PowerDI3333-8
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerVDFN
Case / Package PowerDI3333-8
Family Name DMT6009
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869147-DMT6009LFG-13
Ultra Librarian 3D Model Ultra Librarian DMT6009LFG-13 CAD Model

Description

DMT6009LFG-13 MOSFET by Diodes Incorporated

The DMT6009LFG-13 is a high-performance, N-channel enhancement mode Field Effect Transistor (MOSFET) designed by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This MOSFET is an ideal choice for a wide range of applications requiring efficient power management and high-speed switching capabilities.

Key Features

  • Low On-Resistance: The DMT6009LFG-13 offers an extremely low on-resistance (R<sub>DS(on)), which significantly reduces conduction losses and improves overall efficiency in applications.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D) rating, this MOSFET can handle substantial current loads, making it suitable for high-power applications.
  • PowerDI®5060-8 Package: Encased in the compact and thermally efficient PowerDI®5060-8 package, the DMT6009LFG-13 ensures excellent heat dissipation and a small footprint on PCBs.
  • High-Speed Switching: The device is optimized for fast switching speeds, which is critical for reducing switching losses and improving performance in high-frequency circuits.
  • Low Threshold Voltage: A low threshold voltage (V<sub>GS(th)) allows for the MOSFET to be easily driven at lower gate voltages, enhancing its compatibility with logic-level circuits.

Applications

The DMT6009LFG-13 is versatile and can be utilized in a variety of applications, including:

  • DC/DC Converters
  • Power Management Systems
  • Motor Drives
  • Battery Powered Devices
  • Load Switches
  • Point of Load (POL) Modules

With its robust design and advanced features, the DMT6009LFG-13 MOSFET from Diodes Incorporated stands out as a reliable component for engineers looking to optimize their power circuit designs. Whether it's for industrial, automotive, or consumer electronics, this MOSFET provides a balance of efficiency, power handling, and thermal performance that is hard to match.

For detailed specifications and application notes, designers and engineers are encouraged to consult the official datasheet provided by Diodes Incorporated. This will ensure the best possible implementation of the DMT6009LFG-13 in their projects.

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