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DMT6015LFV-7

Part No DMT6015LFV-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 9.5A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.9 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 1103 pF @ 30 V
Power Dissipation (Max) 2.2W (Ta), 30W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerDI3333-8 (Type UX)
Package / Case 8-PowerVDFN
Base Product Number DMT6015
Standard Package 2,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278399-DMT6015LFV-7
Ultra Librarian 3D Model Ultra Librarian DMT6015LFV-7 CAD Model

Description

DMT6015LFV-7 - A High-Efficiency Power MOSFET from Diodes Incorporated

The DMT6015LFV-7 is a cutting-edge power MOSFET brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This device is designed to cater to the growing demands for energy-efficient power conversion in modern electronic applications.

Featuring a drain-source voltage (VDS) of 60V, the DMT6015LFV-7 is optimized for a variety of applications, including power management tasks, DC-DC converters, and load switches. Its low on-resistance (RDS(on)) minimizes conduction losses, thereby enhancing overall system efficiency. This characteristic is particularly beneficial in applications where power conservation is paramount.

The DMT6015LFV-7 boasts a continuous drain current (ID) of 4.6A at a standard temperature of 25°C. This high current capacity ensures that the device can handle significant power without compromising performance. Moreover, the MOSFET is encapsulated in a compact PowerDI™5 package, which not only saves valuable board space but also provides excellent thermal performance, making it suitable for high-density circuit designs.

One of the key advantages of this MOSFET is its low threshold voltage (VGS(th)), which allows for easy drive and control at lower gate voltages, thus simplifying the design of power circuits. Additionally, the DMT6015LFV-7 is characterized by fast switching speeds, which reduces switching losses and improves the efficiency of applications requiring high-frequency operation.

Diodes Incorporated has designed the DMT6015LFV-7 with robustness in mind. It features built-in ESD protection, which safeguards the device against electrostatic discharges that could potentially damage the internal circuitry. This contributes to the longevity and reliability of the MOSFET, making it a dependable choice for critical applications.

Overall, the DMT6015LFV-7 is a testament to Diodes Incorporated's commitment to providing high-performance semiconductor solutions. Its combination of efficiency, power handling, and compact form factor makes it an excellent choice for designers looking to optimize their power management systems.

For detailed specifications, application notes, and additional resources, interested parties are encouraged to visit the official Diodes Incorporated website or contact their local sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7331 $51.3170
170+ $0.6016 $102.2720
260+ $0.5828 $151.5280
355+ $0.5640 $200.2200
460+ $0.5452 $250.7920
615+ $0.4888 $300.6120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,970 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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