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BSH201,215

Part No BSH201,215
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 300MA SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 1mA (Min)
Max Gate Charge 3nC @ 10V
Max Input Capacitance 70pF @ 48V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 417mW (Ta)
Maximum Rds On at Id,Vgs 2.5 Ohm @ 160mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 104593-BSH201,215
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSH201,215 CAD Model

Description

The BSH201,215 is a cutting-edge, high-performance MOSFET transistor developed by NXP Semiconductors, a leader in the electronic components industry. This product is designed to meet the demanding requirements of modern electronic circuits, providing efficient power management and signal processing capabilities.

Key Features

  • Low On-Resistance: The BSH201,215 boasts an exceptionally low on-resistance, which translates to reduced power loss and improved efficiency in electronic circuits.
  • High-Speed Switching: With its ability to switch on and off rapidly, this MOSFET is ideal for high-frequency applications, ensuring minimal delay and high performance.
  • Low Threshold Voltage: The low threshold voltage feature of the BSH201,215 ensures that it can be easily controlled with low-voltage drive signals, making it suitable for battery-operated devices.
  • Surface-Mount Package: The device comes in a compact, surface-mount package, allowing for efficient use of PCB space and facilitating automated assembly processes.

Applications

The versatility of the BSH201,215 MOSFET makes it an ideal choice for a wide range of applications, including:

  • Power management modules
  • DC-DC converters
  • Motor control circuits
  • LED lighting systems
  • Portable electronic devices
  • Telecommunication infrastructure

Product Specifications

The BSH201,215 is engineered to perform reliably under various conditions and comes with the following specifications:

Parameter Value
Drain-Source Voltage (VDS) 20V
Continuous Drain Current (ID) 1.7A
Power Dissipation (PD) 0.5W
Operating Temperature Range -55°C to +150°C

For designers and engineers looking for a reliable and efficient MOSFET solution, the BSH201,215 from NXP Semiconductors is a superb choice that offers both performance and versatility to meet the needs of today's advanced electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
395+ $0.1269 $50.1255
845+ $0.1189 $100.4705
1,310+ $0.1149 $150.5190
1,875+ $0.1068 $200.2500
2,435+ $0.1028 $250.3180
3,040+ $0.0988 $300.3520
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 56,550 pieces
MOQ: 395 pcs
Order Increment : 1 pcs
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