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DMT6015LSS-13

Part No DMT6015LSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 9.2A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 49 Weeks
Features N-Channel 60 V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-SO
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-SOIC (0.154", 3.90mm Width)
Case / Package 8-SO
Family Name DMT6015
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMT6015LSS-13DICT, DMT6015LSS-13DIDKR, DMT6015LSS-13DITR
Quantity per package 2500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869156-DMT6015LSS-13
Ultra Librarian 3D Model Ultra Librarian DMT6015LSS-13 CAD Model

Description

Introducing the DMT6015LSS-13 MOSFET by Diodes Incorporated

The DMT6015LSS-13 is a state-of-the-art Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading company in the semiconductor market. This product is a testament to Diodes Incorporated's commitment to providing high-efficiency, high-performance solutions for a wide range of electronic applications.

The DMT6015LSS-13 is a P-Channel enhancement mode MOSFET that operates at a -60V drain-source voltage (V<sub>DS) with a -8.5A continuous drain current (I<sub>D), making it an excellent choice for power management tasks. It is housed in a compact PowerDI® 3333-8 package, which is known for its low thermal resistance and high power density, allowing for a smaller footprint on printed circuit boards (PCBs).

The device features a low on-resistance (R<sub>DS(on)) of typically 28mΩ at V<sub>GS = -10V, which minimizes conduction losses and enhances overall efficiency. This characteristic, combined with its fast switching speed, makes the DMT6015LSS-13 an optimal component for a variety of applications, including load switch, battery management, and power conversion systems.

Furthermore, the DMT6015LSS-13 is designed with robustness in mind. It has an integrated gate-source voltage (V<sub>GS) protection of ±20V, which provides a safeguard against voltage spikes that could potentially damage the device. This feature increases the reliability and longevity of the MOSFET in challenging environments.

The MOSFET also boasts a low threshold voltage (V<sub>GS(th)), which allows for operation at lower gate voltages, thus reducing power consumption when in the 'on' state. This characteristic is particularly beneficial for battery-powered devices where energy conservation is crucial.

In conclusion, the DMT6015LSS-13 from Diodes Incorporated is an exceptional choice for designers looking for a P-Channel MOSFET that offers a balance of power efficiency, compact packaging, and durable performance. Whether it's for consumer electronics, automotive systems, or industrial applications, the DMT6015LSS-13 is engineered to meet the demands of the modern electronic landscape.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4301 $51.6120
285+ $0.3530 $100.6050
440+ $0.3419 $150.4360
605+ $0.3309 $200.1945
785+ $0.3199 $251.1215
1,050+ $0.2868 $301.1400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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