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Same model may have multiple batches, images only for reference.
IRFR18N15D Real Image
Same model may have multiple batches, images only for reference.

IRFR18N15D

Part No IRFR18N15D
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 18A DPAK
Datasheet
IRFR18N15D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 18A (Tc)
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 900pF @ 25V
Maximum Rds On at Id,Vgs 125 mOhm @ 11A, 10V
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 091752-IRFR18N15D
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR18N15D CAD Model

Description

The Infineon Technologies IRFR18N15D is a N-channel MOSFET transistor, designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 150V
  • Maximum Continuous Drain Current: 18A @ 25°C
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Input Capacitance: 900pF @ 25V
  • Maximum Rds On at Id,Vgs: 125 mOhm @ 11A, 10V
  • Package: D-Pak case
  • Mounting: Surface-mount technology (SMT)
  • Market: in the open market
  • Status: balanced supply and demand status

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