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DMTH6009LK3-13

Part No DMTH6009LK3-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 14.2A (Ta), 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.5 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 1925 pF @ 30 V
Power Dissipation (Max) 3.2W (Ta), 60W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number DMTH6009
Other Names DMTH6009LK3-13DITR,DMTH6009LK3-13DIDKR,DMTH6009LK3-13DICT
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278403-DMTH6009LK3-13
Ultra Librarian 3D Model Ultra Librarian DMTH6009LK3-13 CAD Model

Description

Product Overview: DMTH6009LK3-13 from Diodes Incorporated

The DMTH6009LK3-13 is a high-performance, surface-mount, N-channel enhancement mode power MOSFET designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This MOSFET is engineered to deliver efficient power management and conversion in a compact package, making it an ideal choice for a wide range of applications.

Key Features

  • High Efficiency: The DMTH6009LK3-13 boasts low on-resistance (R<sub>DS(on)), which translates into minimal conduction losses, enhancing overall efficiency.
  • High Current Capability: With a continuous drain current (I<sub>D) rating of up to 60A, this MOSFET can handle significant current loads, suitable for high-power applications.
  • High Voltage Tolerance: It supports a drain-to-source voltage (V<sub>DSS) of up to 60V, allowing it to be used in circuits with higher operating voltages.
  • Thermal Management: The device features a PowerDI®5x6 package, which provides excellent thermal performance and ensures reliability even at higher temperatures.
  • Low Gate Charge: The low total gate charge (Q<sub>g) results in reduced switching losses, making the MOSFET suitable for high-frequency applications.

Applications

  • DC/DC Converters
  • Power Supply Units
  • Motor Drives
  • Battery Management Systems
  • Computing and Networking Systems

Quality and Reliability

Diodes Incorporated is committed to delivering products that meet the highest standards of quality and reliability. The DMTH6009LK3-13 is no exception, as it undergoes rigorous testing and quality assurance processes to ensure its performance and durability in various applications and environments.

Environmental Compliance

The DMTH6009LK3-13 is RoHS compliant, meaning it adheres to the strict European Union standards that restrict the use of hazardous substances in electronic equipment. This commitment to environmental responsibility ensures that the product is suitable for use in a wide range of markets, including those with strict environmental regulations.

With its combination of high efficiency, robust thermal management, and environmental compliance, the DMTH6009LK3-13 from Diodes Incorporated stands out as a superior choice for designers looking to optimize power in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8181 $53.1765
150+ $0.6713 $100.6950
235+ $0.6503 $152.8205
320+ $0.6294 $201.4080
415+ $0.6084 $252.4860
555+ $0.5454 $302.6970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 37,500 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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