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Same model may have multiple batches, images only for reference.
UNR5210G0L Real Image
Same model may have multiple batches, images only for reference.

UNR5210G0L

Part No UNR5210G0L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 150MW SMINI3
Datasheet
UNR5210G0L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Typical Gain (hFE) (Min) 160 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package SMini3-F2
Win Source Part Number 048552-UNR5210G0L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UNR5210G0L CAD Model

Description

The Panasonic Electronic Components UNR5210G0L is a pre-biased NPN transistor that is designed for use in discrete semiconductor products.

  • Status: obsolete and has an end of life status
  • Maximum collector current: 100mA
  • Maximum collector-emitter breakdown voltage: 50V
  • Maximum power dissipation: 150mW
  • Typical gain: 160 @ 5mA and 10V

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