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DMTH6009LPSQ-13

Part No DMTH6009LPSQ-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V PWRDI5060
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 39 Weeks
Features N-Channel 60 V 11.76A (Ta), 89.5A (Tc) 2.8W (Ta), 136W (Tc) Surface Mount PowerDI5060-8
Manufacturer Diodes Incorporated
Series Automotive, AEC-Q101
Package Reel - TR
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Surface Mount
Package 8-PowerTDFN
Case / Package PowerDI5060-8
Family Name DMTH6009
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 2500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869197-DMTH6009LPSQ-13
Ultra Librarian 3D Model Ultra Librarian DMTH6009LPSQ-13 CAD Model

Description

DMTH6009LPSQ-13 Power MOSFET by Diodes Incorporated

The DMTH6009LPSQ-13 is a high-performance, surface-mount Power MOSFET from Diodes Incorporated, designed to meet the rigorous demands of power regulation in modern electronic devices. This component is part of Diodes Incorporated's extensive range of MOSFETs that are known for their efficiency, reliability, and compact form factors.

Key Features

  • Low On-Resistance: The DMTH6009LPSQ-13 boasts an exceptionally low on-resistance, which ensures minimal power loss during operation and enhances overall efficiency.
  • High Continuous Drain Current: With its ability to support a high continuous drain current, this MOSFET is suitable for applications that require robust current handling capabilities.
  • PowerDI5060-8 Package: Encased in the compact PowerDI5060-8 package, the DMTH6009LPSQ-13 is ideal for space-constrained applications while providing excellent thermal performance.
  • Fast Switching Speed: The device is engineered for fast switching, which is critical for reducing switching losses and improving performance in high-frequency applications.
  • Low Threshold Voltage: A low gate threshold voltage enables the MOSFET to be driven at lower voltages, making it compatible with low-voltage logic and reducing power consumption.

Applications

The DMTH6009LPSQ-13 is versatile and can be used in a wide array of applications, including:

  • DC/DC Converters
  • Power Management Systems
  • Motor Drives
  • Battery Management
  • Load Switches
  • Computing and Server Applications

Technical Specifications

  • Drain-Source Voltage (V<sub>DS): 60V
  • Continuous Drain Current (I<sub>D): 40A
  • Power Dissipation (P<sub>D): 88W
  • R<sub>DS(on): As low as 8.5mΩ at V<sub>GS = 10V
  • Operating Temperature Range: -55°C to +150°C

Overall, the DMTH6009LPSQ-13 from Diodes Incorporated is a robust and efficient solution for power switching and management in a variety of electronic applications. Its combination of low on-resistance, high current capacity, and fast switching makes it a valuable component in any power-sensitive design.

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