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DST3906DJ-7

Part No DST3906DJ-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 40V 0.2A SOT963
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 400mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 300mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-963
Win Source Part Number 080836-DST3906DJ-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DST3906DJ-7 CAD Model

Description

Introducing the DST3906DJ-7 Dual N-Channel Enhancement Mode Field Effect Transistor

The DST3906DJ-7 is a high-performance, dual N-channel enhancement mode field effect transistor (FET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This product is tailored for power management applications and is an essential component for modern electronic devices that require efficient power regulation and switching.

Constructed with advanced trench MOSFET technology, the DST3906DJ-7 offers low on-resistance and a high continuous drain current, making it an ideal choice for power conversion in compact electronics. Its dual N-channel configuration allows for flexibility in design, enabling the implementation of half-bridge, full-bridge, or push-pull topologies within a single package. This makes the DST3906DJ-7 a versatile component suitable for a wide range of applications, including load switches, power management circuits, and DC-DC converters.

The device is housed in a small form factor SOT-363 package, which is not only space-saving but also offers excellent thermal performance for its size. This compact design allows for high-density board layouts, which is critical in portable and space-constrained applications such as smartphones, tablets, and wearable technology.

Key features of the DST3906DJ-7 include:

  • Low threshold voltage (V<sub>GS(th))
  • Low input capacitance and gate charge, facilitating faster switching speeds
  • High forward transfer admittance, ensuring good amplification characteristics
  • High-speed switching performance
  • RoHS compliant and halogen-free, adhering to environmental standards

Diodes Incorporated ensures that the DST3906DJ-7 meets stringent quality and reliability standards, offering robust performance for the most demanding electronic designs. Whether you're developing power supplies, motor controls, or battery management systems, the DST3906DJ-7 provides the efficiency and reliability required to power your innovations.

With its combination of low power dissipation, compact packaging, and high efficiency, the DST3906DJ-7 is the go-to FET for designers looking to optimize their power management strategies in a variety of consumer and industrial applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
705+ $0.0711 $50.1255
1,715+ $0.0584 $100.1560
2,655+ $0.0566 $150.2730
3,660+ $0.0547 $200.2020
4,730+ $0.0529 $250.2170
6,330+ $0.0474 $300.0420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,300 pieces
MOQ: 705 pcs
Order Increment : 1 pcs
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