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DZT3150-13

Part No DZT3150-13
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 25V 5A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 5A
VCEO Maximum Collector-Emitter Breakdown Voltage 25V
Max Vce (sat) 500mV @ 200mA, 4A
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 250 @ 500mA, 2V
Maximum Power Dissipation 1W
Frequency - Transition 150MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 015127-DZT3150-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DZT3150-13 CAD Model

Description

Introducing the DZT3150-13 PNP Transistor by Diodes Incorporated

The DZT3150-13 is a high-performance PNP bipolar junction transistor (BJT) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This transistor is part of Diodes Incorporated's broad range of BJTs, which are known for their reliability, efficiency, and versatility in various electronic applications.

Constructed with the latest semiconductor technology, the DZT3150-13 offers a continuous collector current of -3A, making it suitable for medium power applications. The device is housed in a robust SOT-223 package, which ensures a compact footprint while providing excellent power dissipation capabilities. The SOT-223 package is widely recognized for its ability to handle higher currents and power levels compared to smaller SMD packages, making it an excellent choice for space-constrained designs that require high performance.

With a collector-emitter voltage (V<sub>CEO) of -50V and a collector-base voltage (V<sub>CBO) of -60V, the DZT3150-13 is capable of handling significant voltage levels, thus offering a wide range of operation for designers. Additionally, the device features a low saturation voltage, which minimizes on-state power loss and enhances overall efficiency in switching applications.

The DZT3150-13 is ideal for use in a variety of electronic circuits, including power management systems, amplification stages, switching regulators, and driver circuits. Its fast switching times and high current gain (h<sub>FE) make it a preferred choice for designers looking to optimize their circuitry for speed and power handling.

Diodes Incorporated's commitment to quality ensures that the DZT3150-13 meets the highest standards of performance and reliability. Each transistor is subjected to rigorous testing and quality control measures, guaranteeing that customers receive a product that performs consistently and reliably over time.

For engineers and designers seeking a dependable PNP transistor with medium power handling capabilities, the DZT3150-13 from Diodes Incorporated stands out as an excellent choice. Its combination of power, efficiency, and compact form factor makes it a versatile component for a wide array of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.2298 $58.5990
615+ $0.1887 $116.0505
950+ $0.1827 $173.5650
1,310+ $0.1769 $231.7390
1,690+ $0.1709 $288.8210
2,265+ $0.1533 $347.2245
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
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