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FZT751TA

Part No FZT751TA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 3A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 600mV @ 300mA, 3A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 500mA, 2V
Maximum Power Dissipation 2W
Frequency - Transition 140MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 016615-FZT751TA
Family Name FZT751
Introduction Date October 28, 1997
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FZT751TA CAD Model

Description

The FZT751TA from Diodes Incorporated is a high-performance PNP bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This transistor is known for its high current capability and low saturation voltage, making it an ideal choice for power management and linear amplification tasks.

Key Features:

  • High Current Handling: The FZT751TA is capable of handling continuous collector currents up to -3A, which is suitable for driving high-current loads.
  • Low Saturation Voltage: It has a low collector-emitter saturation voltage of typically -0.2V at -2A, which helps to minimize power loss and improve efficiency in circuit operation.
  • High Power Dissipation: With a power dissipation of 2W, this transistor can handle significant power levels, making it useful for a range of power applications.
  • Wide Operating Temperature Range: The operating temperature range of -55°C to +150°C ensures reliability and performance under extreme conditions.

Applications:

The FZT751TA is versatile and can be used in various applications such as:

  • Power regulation modules
  • Linear amplifiers
  • Switching circuits
  • Driver stages in hi-fi amplifiers and TV circuits
  • Load switch applications

Product Specifications:

Parameter Value Collector-Base Voltage (VCBO) -60V Collector-Emitter Voltage (VCEO) -60V Emitter-Base Voltage (VEBO) -5V Collector Current (IC) -3A Power Dissipation (Pd) 2W

Overall, the FZT751TA PNP transistor from Diodes Incorporated is a robust and reliable component for designers and engineers looking to implement efficient power control and amplification in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
190+ $0.2639 $50.1410
465+ $0.2165 $100.6725
715+ $0.2098 $150.0070
990+ $0.2030 $200.9700
1,275+ $0.1962 $250.1550
1,710+ $0.1759 $300.7890
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Availability: 55,983 pieces
MOQ: 190 pcs
Order Increment : 1 pcs
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