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SPD11N10

Part No SPD11N10
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 10.5A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 21μA
Max Gate Charge 18.3nC @ 10V
Max Input Capacitance 400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 170 mOhm @ 7.8A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package P-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 212031-SPD11N10
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, LED Lighting
Ultra Librarian 3D Model Ultra Librarian SPD11N10 CAD Model

Description

The Infineon Technologies 212031-SPD11N10 is a MOSFET transistor designed for use in power management and LED lighting applications.

  • Polarity: N-channel
  • Maximum Power Dissipation: 50W
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 10.5A
  • Gate-Source Threshold Voltage: 4V @ 21μA
  • Maximum Rds On at Id,Vgs: 170 mOhm @ 7.8A, 10V
  • Package: P-TO252-3 case
  • Mounting Type: SMD (SMT) technology
  • Status: obsolete (EOL).

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.5013 $60.1560
285+ $0.4112 $117.1920
435+ $0.3985 $173.3475
600+ $0.3858 $231.4800
775+ $0.3731 $289.1525
1,040+ $0.3338 $347.1520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,014 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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