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Same model may have multiple batches, images only for reference.
IPA057N06N3G Infineon Technologies
Same model may have multiple batches, images only for reference.

IPA057N06N3G

Part No IPA057N06N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 60A TO220-3-31
Datasheet
IPA057N06N3G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 58μA
Max Gate Charge 82nC @ 10V
Max Input Capacitance 6600pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 5.7 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-31 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 068928-IPA057N06N3G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA057N06N3G CAD Model

Description

The Infineon Technologies IPA057N06N3G is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 60V and a continuous drain current of 60A @ 25°C. The device is designed for use in discrete semiconductor products and features a power dissipation of 38W (Tc). The IPA057N06N3G is mounted through a hole and is packaged in a PG-TO220-3-31 Full Pack case. The device has a gate-source threshold voltage of 4V @ 58μA and a maximum Rds On @ Id,Vgs of 5.7 mOhm @ 60A, 10V.

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