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FZT753TC

Part No FZT753TC
Manufacturer Diodes Incorporated
Catalog RF Transistors (BJT)
Description TRANS PNP 100V 2A SOT223-3  /  Bipolar (BJT) Transistor PNP 100 V 2 A 140MHz 2 W Surface Mount SOT-223-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Diodes Incorporated
Package Tape & Reel
Transistor Type PNP
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 2V
Power - Max 2 W
Frequency - Transition 140MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223-3
Base Product Number FZT753
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0075
Other Names FZT753TC-ND,FZT753TCDICT,FZT753TCDIDKR,FZT753TCDITR
Standard Package 4,000
Win Source Part Number 1060071-FZT753TC
Ultra Librarian 3D Model Ultra Librarian FZT753TC CAD Model

Description

The FZT753TC is a high-performance PNP bipolar transistor manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This transistor is designed to meet the stringent requirements of modern electronic circuits, providing a reliable solution for amplification and switching applications.

Housed in a compact SOT-223 surface-mount package, the FZT753TC is optimized for power density and minimal footprint, making it an ideal choice for space-constrained applications. With its robust design, it can handle continuous collector currents up to -2A, and peak collector currents significantly higher, ensuring versatility in various circuit configurations.

The FZT753TC boasts a low saturation voltage of typically -0.1V at -500mA, which contributes to its high efficiency by minimizing power loss during operation. This feature, combined with a transition frequency (fT) of 100MHz, makes the FZT753TC suitable for high-speed switching and amplification tasks, such as driving motors, solenoids, or other high-current loads.

The device also features a high gain-bandwidth product, ensuring good amplification characteristics over a wide frequency range. This makes the FZT753TC suitable for audio amplifiers, signal processing, and other applications where linearity and bandwidth are critical.

The FZT753TC is characterized by its excellent reliability, with built-in features that protect against overcurrent and thermal overload. Its maximum power dissipation is 2W, allowing for reasonable thermal headroom in typical applications. Diodes Incorporated has designed this transistor with an operating temperature range of -55°C to +150°C, ensuring stable performance across various environmental conditions.

In summary, the FZT753TC from Diodes Incorporated is a versatile, high-performance PNP bipolar transistor that offers a blend of efficiency, power handling, and compact packaging. Its features make it suitable for a wide range of applications, including power management, switching, and signal amplification, in both industrial and consumer electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,370 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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