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Same model may have multiple batches, images only for reference.
FQU6N50CTU Real Image
Same model may have multiple batches, images only for reference.

FQU6N50CTU

Part No FQU6N50CTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 4.5A IPAK / Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) IPAK Rail
Datasheet
FQU6N50CTU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 700pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 2.5W (Ta), 61W (Tc)
Rds On (Maximum) @ Id, Vgs 1.2 Ohm @ 2.25A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package I-Pak
Package TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 774755-FQU6N50CTU
Popularity Medium
Supply and Demand Status Limited
Family Name FQU6N50C
Introduction Date April 01, 2004
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FQU6N50CTU CAD Model

Description

The FQU6N50CTU is a high-quality MOSFET transistor from Fairchild/ON Semiconductor.

  • Series: QFET
  • Channel Type: N
  • Drain-Source Voltage: 500V
  • Continuous Drain (Id) @ 25°C (Tc): 4.5A
  • Power Dissipation (Ta): 2.5W
  • Power Dissipation (Tc): 61W
  • Gate Charge (Qg): 25nC @ 10V
  • Vgs(th): 4V @ 250μA
  • Package: I-Pak
  • Mounting Style: Through-hole

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