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BSO080P03NS3EGXUMA1

Part No BSO080P03NS3EGXUMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 12A 8DSO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.1V @ 150μA
Max Gate Charge 81nC @ 10V
Max Input Capacitance 6750pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 8 mOhm @ 14.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-DSO-8
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1024412-BSO080P03NS3EGXUMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSO080P03NS3EGXUMA1 CAD Model

Description

The Infineon Technologies BSO080P03NS3EGXUMA1 is a P-Channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Power Dissipation: 1.6W (Ta)
  • Continuous Drain Current: Up to 12A (Ta) @ 25°C
  • Drain-Source Breakdown Voltage: 30V
  • Gate-Source Threshold Voltage: 3.1V @ 150μA
  • Rds On: 8 mOhm @ 14.8A, 10V
  • Package: PG-DSO-8
  • Mounting: SMD (SMT)
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6719 $60.4710
210+ $0.5513 $115.7730
325+ $0.5341 $173.5825
450+ $0.5169 $232.6050
580+ $0.4997 $289.8260
775+ $0.4479 $347.1225
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 290 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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