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Same model may have multiple batches, images only for reference.
AUIRFR540Z Real Image
Same model may have multiple batches, images only for reference.

AUIRFR540Z

Part No AUIRFR540Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 100V 35A DPAK
Datasheet
AUIRFR540Z Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 50μA
Max Gate Charge 59nC @ 10V
Max Input Capacitance 1690pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 91W (Tc)
Maximum Rds On at Id,Vgs 28.5 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1020758-AUIRFR540Z
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AUIRFR540Z CAD Model

Description

The AUIRFR540Z is a N-Channel MOSFET from Infineon Technologies.

  • Manufacturer: Infineon Technologies
  • Win Source Part Number: 1020758
  • Packaging: Tube/rail
  • Mounting Style: SMD (SMT)
  • Power Dissipation (Max): 91W (Tc)
  • Category: Discrete Semiconductor Products
  • Polarity: N-Channel
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Status: Active
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Case / Package: DPAK
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 35A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 50μA
  • Max Gate Charge: 59nC @ 10V
  • Max Input Capacitance: 1690pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 28.5 mOhm @ 21A, 10V
  • Supply and Demand Status: sufficient

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