Product Overview: MMBT3904R-01-7

The MMBT3904R-01-7 from Diodes Incorporated is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. This robust transistor is housed in a compact SOT-23 package, making it ideal for surface-mounted design in a variety of electronic circuits.

Key Features

• Device Type: NPN BJT - This transistor type is well-suited for amplification due to its high current gain.
• Package: SOT-23 - A small footprint package that is widely used in modern electronics, offering a good balance between performance and size.
• Collector-Emitter Voltage (Vceo): 40V - This rating ensures the transistor can handle moderate voltage applications without breakdown.
• Collector Current (Ic): 200mA - The transistor can drive moderate loads, making it suitable for a wide range of applications.
• DC Current Gain (hFE): 100 to 300 - A measure of the transistor's amplification capability, indicating good performance for signal amplification.
• Transition Frequency (fT): 300MHz - High-frequency performance suitable for RF applications and fast switching circuits.
• Operating Temperature Range: -55°C to +150°C - Capable of working in extreme environmental conditions, ensuring reliability and stability.

Applications

The versatile nature of the MMBT3904R-01-7 allows it to be used in a variety of electronic applications, including:

• Low power amplification
• Switching and digital logic circuits
• Linear amplification and oscillator circuits
• Signal processing
• Power management

Quality and Reliability

Diodes Incorporated is known for its commitment to quality, and the MMBT3904R-01-7 is no exception. It is manufactured to meet high standards of performance and reliability, ensuring that it meets the needs of even the most demanding applications. Whether you're designing consumer electronics, industrial control systems, or automotive applications, the MMBT3904R-01-7 is a reliable choice that won't disappoint.