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MMBT3904T-7-F

Part No MMBT3904T-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 40V 0.2A SOT523
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 300mV @ 5mA, 50mA
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 150mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-523
Win Source Part Number 023750-MMBT3904T-7-F
Family Name MMBT3904T
Introduction Date November 01, 2002
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MMBT3904T-7-F CAD Model

Description

Diodes Incorporated MMBT3904T-7-F NPN Transistor

The MMBT3904T-7-F from Diodes Incorporated is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. This device is a testament to Diodes Incorporated's commitment to providing industry-leading components that blend quality, efficiency, and reliability for a wide range of electronic circuits.

Encased in a compact SOT-523 package, the MMBT3904T-7-F offers designers a space-saving solution without compromising on power and performance. This transistor is capable of handling continuous collector currents up to 200 mA, making it suitable for a variety of low-power applications. With its low collector-emitter saturation voltage and high current gain bandwidth product, this transistor is optimized for low-voltage operation, which is particularly beneficial in portable and battery-powered devices.

The MMBT3904T-7-F features a collector-emitter voltage (Vceo) of 40V, ensuring it can manage moderate voltage levels in circuit designs. Its transition frequency (fT) of 300 MHz makes it an excellent choice for amplification in RF applications. Additionally, the device has a low noise figure, which is ideal for audio amplification and sensitive signal processing tasks.

Reliability is a cornerstone of the MMBT3904T-7-F's design. It offers excellent thermal stability and is characterized by its robustness against thermal runaway. The transistor is also lead-free, halogen-free, and RoHS compliant, reflecting Diodes Incorporated's dedication to environmental sustainability and safety standards.

Whether you're designing consumer electronics, industrial control systems, or telecommunication devices, the MMBT3904T-7-F is a versatile component that provides a blend of efficiency, compactness, and reliability. Its widespread adoption across various industries is a testament to its utility and performance in demanding applications.

In summary, the MMBT3904T-7-F is a valuable addition to any electronic component inventory, offering designers a reliable, high-performance NPN transistor that meets the rigorous demands of modern electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,625+ $0.0138 $50.0250
7,755+ $0.0129 $100.0395
12,000+ $0.0125 $150.0000
17,245+ $0.0116 $200.0420
22,325+ $0.0112 $250.0400
28,040+ $0.0107 $300.0280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 231,000 pieces
MOQ: 3625 pcs
Order Increment : 1 pcs
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