Product Overview: MMBT4401-7 NPN Transistor

The MMBT4401-7 is a high-performance NPN bipolar junction transistor (BJT) from Diodes Incorporated, designed for use in a wide range of electronic applications. This versatile transistor is housed in a compact SOT-23 package, making it ideal for space-constrained applications where efficient power management and signal amplification are essential.

Key Features

• Type: NPN BJT
• Package: SOT-23 (TO-236)
• Collector-Emitter Voltage (Vceo): 40V
• Collector-Base Voltage (Vcbo): 60V
• Emitter-Base Voltage (Vebo): 6V
• Collector Current (Ic): 600 mA
• Power Dissipation (Pd): 350 mW
• DC Current Gain (hFE): 100 to 400
• Transition Frequency (fT): 300 MHz
• Operating Temperature Range: -55°C to +150°C

Applications

The MMBT4401-7 is suitable for a variety of applications, including but not limited to:

• Switching circuits
• Amplification circuits
• Signal processing
• Power management
• Driver stages in amplifiers
• Voltage regulation circuits

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products. The MMBT4401-7 is manufactured using state-of-the-art technology, ensuring both reliability and performance. It is designed to meet the requirements of the RoHS Directive 2011/65/EU, which restricts the use of certain hazardous substances in electrical and electronic equipment.

Conclusion

Whether you are designing consumer electronics, industrial equipment, or communication devices, the MMBT4401-7 offers the performance and reliability that engineers need to create efficient and durable products. With its robust electrical characteristics and small form factor, the MMBT4401-7 from Diodes Incorporated stands out as a superior choice for your circuit design needs.