Product Overview: MMBTA13-7-F from Diodes Incorporated

The MMBTA13-7-F is a high-quality NPN bipolar junction transistor (BJT) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This transistor is part of their extensive range of discrete, analog, and mixed-signal components designed for various electronic applications.

Key Features

• Device Type: NPN Bipolar Junction Transistor
• Configuration: Single
• Collector- Base Voltage (VCBO): 30V
• Collector- Emitter Voltage (VCEO): 30V
• Emitter- Base Voltage (VEBO): 5V
• Collector Current - Continuous (IC): 500mA
• Power Dissipation (Pd): 300mW
• DC Current Gain (hFE): Minimum 100 at 10mA
• Operating and Storage Junction Temperature Range: -55°C to +150°C
• Package / Case: SOT-23-3

Applications

The MMBTA13-7-F is suitable for a wide range of applications, including but not limited to:

• Switching and Amplification
• Audio Amplifiers
• Signal Processing
• Driver Stages in Hi-Fi Amplifiers and Television Circuits
• Control Systems

Quality and Reliability

This product is built to Diodes Incorporated's high standards for quality and reliability. It is designed to provide consistent performance and is subjected to rigorous testing to ensure it meets the stringent requirements for commercial and industrial electronic devices.

Environmental Compliance

The MMBTA13-7-F transistor is compliant with RoHS (Restriction of Hazardous Substances) directives, indicating that it is manufactured with a commitment to environmental protection and sustainability. This compliance ensures that the product is free from harmful substances such as lead, mercury, and cadmium, making it suitable for use in a wide range of environmentally sensitive applications.