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MMDT4124-7-F

Part No MMDT4124-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Maximum) 200mA
Voltage - Collector Emitter Breakdown (Maximum) 25V
Vce Saturation (Maximum) @ Ib, Ic 300mV @ 5mA, 50mA
Current - Collector Cutoff (Maximum) 50nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 120 @ 2mA, 1V
Power - Max 200mW
Frequency - Transition 300MHz
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 6-TSSOP, SC-88, SOT-363
Manufacturer Package SOT-363
Win Source Part Number 1225262-MMDT4124-7-F
Manufacturer Homepage www.diodes.com
Family Name MMDT4124
Introduction Date October 12, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MMDT4124-7-F CAD Model

Description

The MMDT4124-7-F is a high-performance dual NPN transistor from the reputable manufacturer Diodes Incorporated. This electronic component is designed to offer a compact and efficient solution for a variety of applications requiring dual NPN transistor configurations. The small form factor and the integration of two transistors in one package make it an ideal choice for space-constrained applications.

Key Features and Benefits

  • High Current Gain Bandwidth Product: The MMDT4124-7-F boasts a high current gain bandwidth product (fT), making it suitable for amplification of high-frequency signals.
  • Low Collector-Emitter Saturation Voltage: The low V<sub>CE(sat) helps in reducing power loss and improving efficiency, which is crucial for power-sensitive designs.
  • Dual NPN Transistor Configuration: Integrating two NPN transistors into a single package saves space and simplifies circuit design, especially in applications where matched transistor pairs are required.
  • Surface-Mount Package: The MMDT4124-7-F comes in a SOT-26 package, which is well-suited for automated assembly processes and is designed for surface-mount technology (SMT), further aiding in the miniaturization of electronic circuits.
  • Lead-Free and RoHS Compliant: This product is environmentally friendly, adhering to the Restriction of Hazardous Substances (RoHS) directive, making it suitable for use in a wide range of consumer and industrial products.

Applications

The MMDT4124-7-F is versatile and can be used in various applications, including but not limited to:

  • Signal processing
  • Audio amplifiers
  • Switching circuits
  • Driver stages in hi-fi amplifiers and television circuits
  • Voltage regulation modules

Product Specifications

Parameter Value Configuration Dual NPN Collector-Emitter Voltage (V<sub>CEO) 25V Collector Current (I<sub>C) 200mA Power Dissipation (P<sub>D) 300mW Operating Temperature Range -55°C to +150°C

For detailed product information, technical specifications, and application support, please refer to the official Diodes Incorporated datasheet for the MMDT4124-7-F Dual NPN Transistor.

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