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ZDT651TA

Part No ZDT651TA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 60V 2A SM8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 500mV @ 200mA, 2A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 500mA, 2V
Maximum Power Dissipation 2.75W
Frequency - Transition 175MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SM8
Win Source Part Number 1119979-ZDT651TA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZDT651TA CAD Model

Description

Introducing the ZDT651TA PNP Transistor by Diodes Incorporated

The ZDT651TA is a high-performance PNP transistor component from the reputable semiconductor manufacturer, Diodes Incorporated. This device is designed to cater to a variety of applications that demand a reliable and efficient power management solution. The ZDT651TA is housed in a compact SOT-223 package, which not only ensures a minimal footprint on circuit boards but also provides excellent power dissipation characteristics.

With its robust design, the ZDT651TA offers a continuous collector current of up to -2A, making it suitable for moderate to high-power applications. The transistor operates at a power dissipation of 2W, which allows it to handle significant levels of power without compromising performance. Its high gain bandwidth product and fast switching speeds make it an ideal choice for amplification and switching applications in commercial, industrial, and consumer electronic products.

The ZDT651TA features a collector-emitter voltage (Vceo) of -60V, which ensures that it can withstand substantial voltage levels while maintaining stability and reliability. Its collector-base voltage (Vcbo) of -80V provides an additional margin for applications that may experience voltage spikes or surges. The device also has an emitter-base voltage (Vebo) of -5V, further contributing to its robustness against harsh electrical environments.

This transistor is designed with a hFE (DC current gain) range that ensures consistent performance across various operating conditions. The ZDT651TA also boasts a low saturation voltage, which reduces power loss and improves efficiency in circuits where it is deployed. Its fast switching capabilities ensure that it can respond quickly to control signals, making it a versatile component for high-speed circuit designs.

Diodes Incorporated's commitment to quality is evident in the ZDT651TA, which is produced using state-of-the-art manufacturing processes to ensure high reliability and performance consistency. Whether it's for audio amplifiers, power management circuits, or switch mode power supplies, the ZDT651TA is a reliable choice for designers seeking a PNP transistor that combines compactness with high-power handling capabilities.

Overall, the ZDT651TA from Diodes Incorporated represents a perfect blend of performance, efficiency, and reliability, making it a go-to component for engineers and electronics enthusiasts alike.

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