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ZTX605STZ

Part No ZTX605STZ
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 120V 1A E-LINE
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging AMMO PACKAGE
Status Active
Transistor Polarity NPN - Darlington
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 1.5V @ 1mA, 1A
Collector Cut-off Current(Max) 10μA
Typical Gain (hFE) (Min) 2000 @ 1A, 5V
Maximum Power Dissipation 1W
Frequency - Transition 150MHz
Temperature Range - Operating -55°C to 200°C (TJ)
Mounting Through Hole
Case / Package E-Line (TO-92 compatible)
Win Source Part Number 1120248-ZTX605STZ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZTX605STZ CAD Model

Description

Introducing the ZTX605STZ from Diodes Incorporated

The ZTX605STZ is a high-performance, low saturation NPN transistor designed and manufactured by Diodes Incorporated, a leading global provider and manufacturer of high-quality semiconductor products. This transistor is a stellar choice for a range of applications that require switching and amplification with high efficiency and reliability.

Constructed with a robust design, the ZTX605STZ boasts a collector-emitter voltage (VCEO) of up to 120V, ensuring it can handle significant voltage levels while operating. Its collector current rating of 1A makes it suitable for moderate power applications, while the power dissipation of 1W ensures it can sustain a certain level of thermal stress during operation.

The ZTX605STZ comes in a compact SOT-223 surface-mount package, which not only saves valuable board space but also facilitates better thermal performance compared to traditional TO-92 packages. This packaging is ideal for automated assembly processes, making it a convenient choice for mass production.

One of the key features of the ZTX605STZ is its low saturation voltage, which minimizes power loss and improves efficiency in switch-mode applications. This characteristic is particularly beneficial in low-voltage operations where power conservation is crucial, such as in battery-powered devices, LED lighting, and portable electronics.

Additionally, the ZTX605STZ offers excellent gain characteristics with a high hFE (DC current gain) value, providing consistent performance across a wide range of operating conditions. This makes it a versatile component for designing amplifiers and other circuits where gain stability is essential.

Diodes Incorporated has ensured that the ZTX605STZ meets the stringent quality and reliability standards expected by the industry. It is RoHS compliant, reflecting the company's commitment to environmental sustainability by avoiding the use of hazardous substances in its products.

In conclusion, the ZTX605STZ from Diodes Incorporated is an exceptional choice for designers and engineers looking for a reliable, efficient, and space-saving NPN transistor. Its high voltage rating, moderate current handling, low saturation, and excellent gain characteristics make it a versatile component suitable for a wide array of electronic applications.

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