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ZTX696BSTZ

Part No ZTX696BSTZ
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 180V 0.5A E-LINE
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Packaging Tape & Box (TB)
Transistor Type NPN
Current - Collector (Ic) (Maximum) 500mA
Voltage - Collector Emitter Breakdown (Maximum) 180V
Vce Saturation (Maximum) at Ib, Ic 250mV at 5mA, 200mA
Current - Collector Cutoff (Maximum) 100nA (ICBO)
DC Current Gain (hFE) (Min) at Ic, Vce 150 at 200mA, 5V
Power - Max 1W
Frequency - Transition 70MHz
Temperature Range - Operating -55°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package E-Line-3, Formed Leads
Supplier Device Package E-Line (TO-92 compatible)
Part Number Series ZTX696B
Manufacturer Pack Quantity 2,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Balance
Win Source Part Number 802534-ZTX696BSTZ
Ultra Librarian 3D Model Ultra Librarian ZTX696BSTZ CAD Model

Description

Introducing Product ZTX696BSTZ from Diodes Incorporated

The ZTX696BSTZ is a cutting-edge bipolar junction transistor (BJT) developed by Diodes Incorporated, a leading manufacturer in the semiconductor market. This high-performance NPN transistor is designed to deliver exceptional efficiency and reliability for a wide range of applications, including switching operations and amplification circuits.

Key Features:

  • High Current Gain: With an impressive gain bandwidth product, the ZTX696BSTZ ensures high amplification in various electronic circuits.
  • Low Saturation Voltage: The device exhibits a low collector-emitter saturation voltage, which translates to reduced power loss and improved efficiency during operation.
  • Enhanced Thermal Performance: The ZTX696BSTZ is encapsulated in a robust package that provides excellent thermal conductivity, ensuring stable performance even under high-temperature conditions.
  • Wide Operating Temperature Range: Its ability to operate over a broad temperature range makes it suitable for challenging environments and demanding applications.

Applications:

The versatile nature of the ZTX696BSTZ makes it an ideal choice for a variety of applications, including:

  • Power management systems
  • Linear amplifiers and audio amplifiers
  • Switching regulators
  • Motor control circuits
  • Signal processing

Product Specifications:

The ZTX696BSTZ boasts robust specifications that meet the needs of modern electronic designs:

  • Collector-Emitter Voltage (Vceo): This transistor can handle significant voltage levels, making it suitable for high-voltage applications.
  • Collector Current (Ic): It supports a high collector current, allowing it to drive larger loads.
  • Power Dissipation (Pd): With a high power dissipation rating, the ZTX696BSTZ can manage considerable power without compromising performance.

Diodes Incorporated's ZTX696BSTZ represents a blend of innovative design and manufacturing excellence, providing an efficient and durable solution for today's electronic demands. Whether you're designing power supplies, amplifiers, or control systems, the ZTX696BSTZ stands ready to elevate your project with its superior performance and reliability.

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