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ZTX751QSTZ

Part No ZTX751QSTZ
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description PWR MID PERF TRANSISTOR EP3 AMMO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Box (TB)
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 2V
Power - Max 1 W
Frequency - Transition 140MHz
Temperature Range - Operating -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Supplier Device Package E-Line (TO-92 compatible)
Standard Package 4,000 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 700613-ZTX751QSTZ
Ultra Librarian 3D Model Ultra Librarian ZTX751QSTZ CAD Model

Description

Introducing the ZTX751QSTZ PNP Transistor from Diodes Incorporated

The ZTX751QSTZ is a high-performance PNP transistor designed by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This device is tailored for applications requiring efficient current regulation and is a reliable component for amplification and switching applications.

Key Features

  • High Current Capability: The ZTX751QSTZ can handle continuous collector currents up to -2A, making it suitable for high-power applications.
  • Low Saturation Voltage: It boasts a low collector-emitter saturation voltage, which translates to reduced power loss and improved efficiency in operation.
  • High Power Dissipation: With a power dissipation of 1W, this transistor can withstand higher thermal loads, ensuring reliability under varying operating conditions.
  • Fast Switching Times: The device features fast switching times, which is crucial for applications that require rapid transitions between on and off states.
  • Wide Operating Temperature Range: The ZTX751QSTZ operates effectively over a broad temperature range, maintaining performance from -55°C to +150°C.

Applications

The ZTX751QSTZ is versatile and can be used in a wide range of electronic circuits. Typical applications include:

  • Power Management Circuits
  • Linear Amplifiers
  • Signal Processing
  • Switching Regulators
  • Motor Controllers
  • Audio Amplifiers

Quality and Reliability

Diodes Incorporated is committed to delivering high-quality products. The ZTX751QSTZ is manufactured with the latest technology and undergoes rigorous testing to ensure it meets the industry standards for performance and reliability. This component is RoHS compliant, reflecting the company's dedication to environmental responsibility.

Technical Specifications

Parameter Value Collector-Base Voltage (VCBO) -45V Collector-Emitter Voltage (VCEO) -45V Emitter-Base Voltage (VEBO) -5V Continuous Collector Current (IC) -2A Power Dissipation (PD) 1W Operating Temperature Range (Tj) -55°C to +150°C

For engineers and designers looking for a robust PNP transistor with exceptional performance, the ZTX751QSTZ from Diodes Incorporated is an excellent choice. Its superior characteristics ensure that it can meet the demands of even the most challenging electronic designs.

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