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ZTX855STZ

Part No ZTX855STZ
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 150V 4A E-LINE
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging AMMO PACKAGE
Status Active
Transistor Polarity NPN
Maximum Current Collector 4A
VCEO Maximum Collector-Emitter Breakdown Voltage 150V
Max Vce (sat) 260mV @ 400mA, 4A
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 1A, 5V
Maximum Power Dissipation 1.2W
Frequency - Transition 90MHz
Temperature Range - Operating -55°C to 200°C (TJ)
Mounting Through Hole
Case / Package E-Line (TO-92 compatible)
Win Source Part Number 1120275-ZTX855STZ
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZTX855STZ CAD Model

Description

Introducing the ZTX855STZ from Diodes Incorporated

The ZTX855STZ is a high-performance, medium-power bipolar transistor from the leading semiconductor manufacturer Diodes Incorporated. Designed with precision and reliability in mind, this NPN transistor is a versatile component suitable for a broad range of applications, including amplification and switching purposes in commercial, industrial, and educational environments.

Constructed with an innovative planar technology, the ZTX855STZ offers excellent hFE characteristics over a wide range of collector currents, ensuring consistent performance and making it an ideal choice for demanding applications. The device is housed in an E-Line package, which is not only compact but also enables efficient heat dissipation and easy installation on a printed circuit board (PCB).

Key Features:

  • Voltage Capability: The ZTX855STZ can handle collector-base voltages up to 300V, making it suitable for circuits operating at higher voltages.
  • Current Handling: With a continuous collector current rating of up to 1A, this transistor can drive medium-power circuits with ease.
  • Power Dissipation: It has a power dissipation of 1.25W, which contributes to its ability to manage power in various applications without overheating.
  • High Gain Bandwidth Product: The device features a transition frequency of 100MHz, providing the bandwidth needed for high-speed amplification tasks.
  • Low Saturation Voltage: The ZTX855STZ exhibits low saturation voltages, minimizing power loss and improving efficiency in switching applications.

Applications:

  • Power Management
  • Audio Amplifiers
  • Signal Processing
  • Motor Control
  • Switching Regulators

The ZTX855STZ transistor is a testament to Diodes Incorporated's commitment to providing high-quality, durable, and reliable electronic components. With its robust design and impressive electrical characteristics, this component is set to meet the needs of both current and future circuit designs. Whether you're designing a power supply, an audio amplifier, or any other application that requires a dependable NPN transistor, the ZTX855STZ is an excellent choice that ensures performance and longevity.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0782 $53.9100
115+ $0.8847 $101.7405
180+ $0.8571 $154.2780
245+ $0.8294 $203.2030
315+ $0.8018 $252.5670
420+ $0.7188 $301.8960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,495 pieces
MOQ: 50 pcs
Order Increment : 2000 pcs
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