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ZUMT591TA

Part No ZUMT591TA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 1A SC70-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 600mV @ 100mA, 1A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 100 @ 500mA, 5V
Maximum Power Dissipation 500mW
Frequency - Transition 150MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323
Win Source Part Number 036825-ZUMT591TA
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZUMT591TA CAD Model

Description

Introducing the ZUMT591TA Transistor from Diodes Incorporated

The ZUMT591TA is a high-performance PNP transistor designed and manufactured by Diodes Incorporated, a leading global provider of semiconductor products. This transistor is housed in a compact SOT-323 package, making it ideal for space-constrained applications. It is designed to offer a blend of low power consumption and high efficiency, which is critical for modern electronic devices.

The ZUMT591TA boasts a collector-emitter voltage (V<sub>CEO) of -20V and collector current (I<sub>C) of -500mA, which allows it to handle moderate power applications efficiently. The device features a -500mW power dissipation, providing a good balance between power handling and thermal performance. This makes the ZUMT591TA suitable for a wide range of applications, from signal processing to power management.

One of the key advantages of the ZUMT591TA is its high gain bandwidth product (f<sub>T) of 140MHz, which enables the transistor to operate at higher frequencies. This characteristic is particularly beneficial for applications that require fast switching and accurate amplification, such as RF amplifiers, oscillators, and mixers. Additionally, the transistor has a low collector-emitter saturation voltage, which helps to minimize power loss and improve efficiency in switching applications.

The ZUMT591TA is also characterized by its excellent h<sub>FE linearity, which ensures consistent performance over a wide range of operating conditions. This feature is critical for applications that demand precise control, such as audio amplifiers and active filters. Moreover, its robustness is further enhanced by its moisture sensitivity level 1 (MSL 1) rating, indicating that it is less susceptible to moisture-induced damage during soldering and operation.

Overall, the ZUMT591TA from Diodes Incorporated is a versatile PNP transistor that offers a compelling combination of size, performance, and efficiency. Whether it's for amplification, switching, or any other application requiring a reliable PNP transistor, the ZUMT591TA is an excellent choice for designers and engineers seeking high-quality semiconductor components.

For detailed specifications and application notes, customers are encouraged to visit the Diodes Incorporated website or contact their support team for further assistance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
275+ $0.1823 $50.1325
670+ $0.1496 $100.2320
1,040+ $0.1449 $150.6960
1,430+ $0.1403 $200.6290
1,845+ $0.1356 $250.1820
2,470+ $0.1216 $300.3520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 275 pcs
Order Increment : 1 pcs
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