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ZVN3306FTA

Part No ZVN3306FTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 150MA SOT23-3 / Trans MOSFET N-CH 60V 0.15A 3-Pin SOT-23 T/R
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.4V @ 1mA
Max Input Capacitance 35pF @ 18V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 330mW (Ta)
Maximum Rds On at Id,Vgs 5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 036835-ZVN3306FTA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name ZVN3306F
Introduction Date September 19, 1997
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian ZVN3306FTA CAD Model

Description

Introducing the ZVN3306FTA MOSFET from Diodes Incorporated

The ZVN3306FTA is a high-performance, N-Channel Enhancement Mode Field Effect Transistor (MOSFET) brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This particular MOSFET is designed to provide efficient power control and conversion in a compact SOT-23 package, making it an ideal solution for space-constrained applications.

With its low on-resistance and high thermal performance, the ZVN3306FTA is capable of handling continuous drain currents up to 1.1A, making it suitable for a wide range of power management tasks. The device operates at a maximum junction temperature of 150°C, ensuring reliability and stability even under challenging thermal conditions.

One of the standout features of the ZVN3306FTA is its low threshold voltage, which allows for enhanced control at lower gate voltages. This characteristic is particularly beneficial in low voltage applications where power efficiency is critical. The MOSFET also boasts fast switching speeds, contributing to reduced power losses and improved overall performance in high-frequency switching applications.

Key Features of the ZVN3306FTA:

  • Device Type: N-Channel MOSFET
  • Package Type: SOT-23
  • Continuous Drain Current (ID): 1.1A
  • Drain-Source Voltage (VDS): 60V
  • Gate-Source Voltage (VGS): ±20V
  • RDS(on) Max: 1.2Ω at VGS = 10V
  • Low Threshold Voltage: 2.1V (Typical)
  • High-Speed Switching Capability
  • Maximum Junction Temperature: 150°C

The ZVN3306FTA is also characterized by its robustness, featuring built-in protection against electrostatic discharge (ESD) which enhances its durability in sensitive electronic environments. This makes it an excellent choice for automotive, industrial, and consumer electronics where reliability is paramount.

In summary, the ZVN3306FTA from Diodes Incorporated is a versatile and reliable component that offers designers a compact and efficient solution for a variety of power control applications. Its combination of low on-resistance, high thermal performance, and fast switching speeds makes it a standout choice for engineers looking to optimize their designs for both performance and size.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5279 $50.1505
235+ $0.4331 $101.7785
360+ $0.4196 $151.0560
495+ $0.4061 $201.0195
640+ $0.3925 $251.2000
855+ $0.3519 $300.8745
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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