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ZVN3310ASTOA

Part No ZVN3310ASTOA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 200MA TO92-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.4V @ 1mA
Max Input Capacitance 40pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 625mW (Ta)
Maximum Rds On at Id,Vgs 10 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package E-Line (TO-92 compatible)
Dimension E-Line-3
Win Source Part Number 057843-ZVN3310ASTOA
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian ZVN3310ASTOA CAD Model

Description

Introducing the ZVN3310ASTOA MOSFET from Diodes Incorporated

The ZVN3310ASTOA is a high-quality N-Channel Enhancement Mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This component is engineered to deliver efficient power management and signal conditioning in a wide array of electronic applications.

Constructed with state-of-the-art technology, the ZVN3310ASTOA features a compact SOT-23 package, making it an excellent choice for space-constrained applications. The device offers a continuous drain current of 280 mA, which allows it to handle moderate power loads efficiently. Its low on-resistance of 5 Ohms minimizes power loss and improves overall system efficiency, which is vital for power-sensitive designs.

The ZVN3310ASTOA operates with a maximum gate threshold voltage of 2.5V, which ensures low-voltage operation, making it suitable for battery-powered devices and portable electronics where power conservation is crucial. Its fast switching speed enhances performance in high-frequency circuits, contributing to reduced switching losses and better energy efficiency.

This MOSFET is designed to withstand a drain-source voltage (Vds) of up to 100V, offering a generous margin for voltage spikes and transient conditions, which is essential for reliability and longevity in demanding environments. Additionally, its maximum power dissipation of 1W ensures that the device can handle significant thermal stress during operation.

The ZVN3310ASTOA is lead-free, halogen-free, and RoHS compliant, reflecting Diodes Incorporated's commitment to environmental sustainability and meeting the requirements of eco-friendly electronic product designs. Its rugged construction and built-in protection features make it a reliable choice for industrial, automotive, and consumer electronics applications such as motor control, power management, and switching regulators.

In summary, the ZVN3310ASTOA from Diodes Incorporated is a versatile and robust MOSFET that offers designers a balance of performance, efficiency, and reliability. Whether for power regulation, signal processing, or any application requiring a high-performance N-Channel MOSFET, the ZVN3310ASTOA is an excellent choice that engineers can trust.

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4046 $58.6670
350+ $0.3321 $116.2350
540+ $0.3217 $173.7180
745+ $0.3113 $231.9185
960+ $0.3009 $288.8640
1,285+ $0.2698 $346.6930
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 66,000 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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