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ZVN4206GTA

Part No ZVN4206GTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 1A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Input Capacitance 100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 1 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 036839-ZVN4206GTA
Family Name ZVN4206G
Introduction Date October 20, 1997
ECCN EAR99
Country of Origin Germany
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZVN4206GTA CAD Model

Description

Introducing the ZVN4206GTA MOSFET from Diodes Incorporated

The ZVN4206GTA is a high-performance, N-channel enhancement mode Field-Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to deliver efficient power management and signal processing in a variety of applications. It is a testament to Diodes Incorporated's commitment to providing innovative solutions that meet the evolving needs of the electronics industry.

Key Features

  • High Current Capability: The ZVN4206GTA boasts a continuous drain current (ID) of 600mA, making it suitable for high current applications.
  • Low On-Resistance: With an RDS(on) of just 1.2 Ohms, this MOSFET ensures minimal power loss and improved efficiency in your circuit designs.
  • High Breakdown Voltage: The device can handle a maximum drain-source voltage (VDSS) of 60V, providing a good safety margin for most low to medium voltage applications.
  • Enhanced Thermal Performance: The ZVN4206GTA comes in a TO-92 package, which is known for its excellent thermal characteristics, ensuring the device operates reliably even under higher temperatures.

Applications

The versatility of the ZVN4206GTA MOSFET makes it an ideal choice for a wide range of applications, including:

  • Power management systems
  • Motor control circuits
  • DC-DC converters
  • Load switches
  • Relay replacements
  • Amplifier switches

Quality and Reliability

Diodes Incorporated is known for its stringent quality control and the ZVN4206GTA is no exception. It is designed to meet the high reliability standards required in industrial and consumer electronic products. With its robust construction and tested performance, this MOSFET is a reliable choice for designers looking to enhance their electronic designs.

Whether you are developing power supplies, optimizing control systems, or innovating in the IoT space, the ZVN4206GTA from Diodes Incorporated offers the performance and reliability that your projects demand. With its superior electrical characteristics and flexible application range, this MOSFET is set to be a valuable component in any electronic enthusiast's or professional's toolkit.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8732 $52.3920
140+ $0.7165 $100.3100
220+ $0.6941 $152.7020
300+ $0.6717 $201.5100
390+ $0.6493 $253.2270
520+ $0.5821 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,120 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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