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ZVN4306GTC

Part No ZVN4306GTC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 2.1A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta)
Maximum Rds On at Id,Vgs 330 mOhm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1120312-ZVN4306GTC
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZVN4306GTC CAD Model

Description

Introducing the ZVN4306GTC – A Robust N-Channel Enhancement Mode MOSFET by Diodes Incorporated

The ZVN4306GTC is a high-performance, N-channel enhancement mode MOSFET designed and manufactured by the renowned semiconductor company, Diodes Incorporated. This device is engineered to deliver efficient power control and switching with its rugged design and advanced features, making it an ideal choice for a variety of applications.

With its compact SOT-223 package, the ZVN4306GTC is designed to offer a space-saving solution without compromising on power and performance. The device features a drain-source voltage (V<sub>DS) of 60V, which provides a wide operating range for various circuit designs. The continuous drain current (I<sub>D) of up to 1.2A allows for handling significant power levels, ensuring reliable operation in demanding situations.

The low on-resistance (R<sub>DS(on)) of this MOSFET is a testament to its efficiency, reducing power losses and improving overall system performance. This characteristic is particularly beneficial in power management applications where energy efficiency is paramount. Additionally, the ZVN4306GTC boasts fast switching speeds, which is crucial for high-frequency applications, such as switch-mode power supplies and DC-DC converters.

Designed with versatility in mind, the ZVN4306GTC is suitable for a wide range of applications, including load switching, power management, motor control, and other general-purpose switching applications. Its robustness is further enhanced by its ability to withstand high energy pulses in the avalanche and commutation modes, making it a reliable choice for circuits that may experience unexpected voltage spikes.

Diodes Incorporated has ensured that the ZVN4306GTC meets the stringent requirements of industrial standards. The device is RoHS compliant, ensuring that it adheres to environmental regulations by avoiding the use of hazardous substances. This commitment to environmental sustainability, combined with the MOSFET's high performance, positions the ZVN4306GTC as a forward-thinking solution for modern electronic designs.

In summary, the ZVN4306GTC from Diodes Incorporated is a powerful and reliable N-channel enhancement mode MOSFET that offers designers a combination of efficiency, speed, and ruggedness, all packed into a compact and environmentally friendly package.

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